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A25L20PUO-F 参数 Datasheet PDF下载

A25L20PUO-F图片预览
型号: A25L20PUO-F
PDF下载: 下载PDF文件 查看货源
内容描述: 的2Mbit /为1Mbit /达512Kbit ,低电压,串行闪存的85MHz SPI总线接口 [2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface]
分类和应用: 闪存
文件页数/大小: 43 页 / 544 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A25L20P/A25L10P/A25L05P Series  
Bulk Erase (BE)  
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before  
it can be accepted, a Write Enable (WREN) instruction must  
previously have been executed. After the Write Enable  
(WREN) instruction has been decoded, the device sets the  
Write Enable Latch (WEL).  
S
is not executed. As soon as Chip Select ( ) is driven High,  
the self-timed Bulk Erase cycle (whose duration is tBE) is  
initiated. While the Bulk Erase cycle is in progress, the Status  
Register may be read to check the value of the Write In  
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during  
the self-timed Bulk Erase cycle, and is 0 when it is completed.  
At some unspecified time before the cycle is completed, the  
Write Enable Latch (WEL) bit is reset.  
The Bulk Erase (BE) instruction is executed only if all Block  
Protect (BP1, BP0) bits are 0. The Bulk Erase (BE) instruction  
is ignored if one, or more, sectors are protected.  
The Bulk Erase (BE) instruction is entered by driving Chip  
S
Select ( ) Low, followed by the instruction code on Serial  
S
Data Input (DIO). Chip Select ( ) must be driven Low for the  
entire duration of the sequence.  
The instruction sequence is shown in Figure 14. Chip Select  
S
(
) must be driven High after the eighth bit of the instruction  
code has been latched in, otherwise the Bulk Erase instruction  
Figure 14. Bulk Erase (BE) Instruction Sequence  
S
0
1
3
2
4 5  
6
7
C
Instruction  
DIO  
Note: Address bits A23 to A18 are Don’t Care, for A25L20P.  
Address bits A23 to A17 are Don’t Care, for A25L10P.  
Address bits A23 to A16 are Don’t Care, for A25L05P  
(August, 2007, Version 1.0)  
22  
AMIC Technology Corp.  
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