A25L16P Series
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of
the device, most significant bit first.
Serial Data Input (DIO) is sampled on the first rising edge of
after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk
Erase (BE), Write Status Register (WRSR), Write Enable
(WREN), Write Disable (WRDI) or Deep Power-down (DP)
Serial Clock (C) after Chip Select ( ) is driven Low. Then,
S
instruction, Chip Select ( ) must be driven High exactly at a
S
byte boundary, otherwise the instruction is rejected, and is
the one-byte instruction code must be shifted in to the device,
most significant bit first, on Serial Data Input (DIO), each bit
being latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 3.
Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by
address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes
at Higher Speed (Fast_Read), Read Status Register (RDSR)
or Release from Deep Power-down, Read Device
Identification and Read Electronic Signature (RES)
instruction, the shifted-in instruction sequence is followed by
not executed. That is, Chip Select ( ) must driven High
S
when the number of clock pulses after Chip Select ( ) being
S
driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write
Status Register cycle, Program cycle or Erase cycle are
ignored, and the internal Write Status Register cycle,
Program cycle or Erase cycle continues unaffected.
a data-out sequence. Chip Select ( ) can be driven High
S
Table 3. Instruction Set
One-byte
Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
Instruction
WREN
Description
Write Enable
Write Disable
0000 0110
0000 0100
0000 0101
0000 0001
0000 0011
0000 1011
06h
04h
05h
01h
03h
0Bh
0
0
0
0
3
3
0
0
0
0
0
1
0
WRDI
0
RDSR
Read Status Register
Write Status Register
1 to ∞
1
WRSR
READ
Read Data Bytes
1 to ∞
1 to ∞
FAST_READ
Read Data Bytes at Higher Speed
FAST_READ_DUAL
_OUTPUT
Read Data Bytes at Higher Speed by
Dual Output (1)
00111011
10111011
3Bh
BBh
3
1
1 to ∞
1 to ∞
FAST_READ_DUAL
_INPUT-OUTPUT
Read Data Bytes at Higher Speed by
Dual Input and Dual Output (1)
3(2)
1(2)
PP
SE
Page Program
Sector Erase
0000 0010
1101 1000
02h
D8h
C7h
or
3
3
0
0
1 to 256
0
1100 0111
BE
Bulk Erase
0
0
0
or
01100000
60h
B9h
9Fh
DP
Deep Power-down
1011 1001
1001 1111
0
0
0
0
0
RDID
Read Device Identification
1 to 4
Release from Deep Power-down, and
Read Electronic Signature
0
0
3
0
1 to ∞
RES
1010 1011
ABh
Release from Deep Power-down
0
Note: (1) DIO = (D6, D4, D2, D0)
DO = (D7, D5, D3, D1)
(2) Dual Input, DIO = (A22, A20, A18, ………, A6, A4, A2, A0)
DO = (A23, A21, A19, …….., A7, A5, A3, A1)
PRELIMINARY (April, 2007, Version 0.6)
9
AMIC Technology Corp.
AMICC [ AMIC TECHNOLOGY ]
