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A25L016O-UFQ 参数 Datasheet PDF下载

A25L016O-UFQ图片预览
型号: A25L016O-UFQ
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mbit的低电压,串行闪存的100MHz统一4KB扇区 [16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors]
分类和应用: 闪存
文件页数/大小: 43 页 / 681 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A25L016 Series  
Read Data Bytes (READ)  
therefore, be read with a single Read Data Bytes (READ)  
instruction. When the highest address is reached, the  
address counter rolls over to 000000h, allowing the read  
sequence to be continued indefinitely.  
S
The device is first selected by driving Chip Select ( ) Low.  
The instruction code for the Read Data Bytes (READ)  
instruction is followed by a 3-byte address (A23-A0), each bit  
being latched-in during the rising edge of Serial Clock (C).  
Then the memory contents, at that address, is shifted out on  
Serial Data Output (DO), each bit being shifted out, at a  
maximum frequency fR, during the falling edge of Serial Clock  
(C).  
The Read Data Bytes (READ) instruction is terminated by  
S
S
driving Chip Select ( ) High. Chip Select ( ) can be driven  
High at any time during data output. Any Read Data Bytes  
(READ) instruction, while an Erase, Program or Write cycle is  
in progress, is rejected without having any effects on the  
cycle that is in progress.  
The instruction sequence is shown in Figure 8. The first byte  
addressed can be at any location. The address is  
automatically incremented to the next higher address after  
each byte of data is shifted out. The whole memory can,  
Figure 8. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence  
S
0
1
2
3
4
5
6
7
8
9 10  
28 29 30 31  
33 34 35 36 37 38 39  
32  
C
DIO  
DO  
Instruction  
24-Bit Address  
21  
23  
2
1
0
22  
3
MSB  
Data Out 2  
Data Out 1  
High Impedance  
5
4
1
0
6
3
2
7
7
MSB  
Note:. Address bits A23 to A21 are Don’t Care, for A25L016.  
(March, 2012, Version 2.0)  
15  
AMIC Technology Corp.  
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