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N64S0818HDAS2-20I 参数 Datasheet PDF下载

N64S0818HDAS2-20I图片预览
型号: N64S0818HDAS2-20I
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 8KX8, CMOS, PDSO8, 0.150 INCH, GREEN, PLASTIC, SOIC-8]
分类和应用: 时钟静态存储器光电二极管内存集成电路
文件页数/大小: 15 页 / 232 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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N64S0818HDA/N64S0830HDA  
Advance Information  
AMI Semiconductor, Inc.  
Page and Burst WRITE Sequence  
CS  
SCK  
0
1
2
3
4
5
6
7
8
9
10 11  
21 22 23 24 25 26 27 28 29 30 31  
Instruction  
16-bit address  
SI  
0
0
0
0
0
0
1
0
15 14 13 12  
2
1
0
7
6
5
4
3
2
1
0
ADDR 1  
Data In to ADDR 1  
SO  
High-Z  
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47  
Data In to ADDR 2 Data In to ADDR 3  
Data In to ADDR n  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
...  
High-Z  
Page WRITE Sequence  
Data Words: sequential, at the end of the page the  
address wraps back to the beginning of the page  
SI  
16-bit address  
Page address (X)  
Word address (Y)  
Page X  
Word Y  
Page X  
Word Y+1 Word Y+2  
Page X  
Page X  
Word 31 Word 0  
Page X  
Page X  
Word 1  
SO  
High-Z  
Burst WRITE Sequence  
. . .  
. . .  
SI  
16-bit address  
Page address (X)  
Word address (Y)  
Page X  
Word Y  
Page X  
Word Y+1  
Page X  
Word 31 Word 0  
Page X  
Page X  
Word 1  
Page X  
Page X+1 Page X+1  
Word Y-1 Word Y Word Y+1  
Data Words: sequential, at the end of the page the address wraps to the beginning of the page and  
continues incrementing up to the starting word address. At that time, the address increments to the  
next page and the burst continues.  
SO  
High-Z  
Stock No. 23477-F  
The specification is ADVANCE INFORMATION and subject to change without notice.  
10