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N256S0830HDAS2-25I 参数 Datasheet PDF下载

N256S0830HDAS2-25I图片预览
型号: N256S0830HDAS2-25I
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM,]
分类和应用: 静态存储器
文件页数/大小: 15 页 / 201 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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N256S0818HDA/N256S0830HDA  
Advance Information  
AMI Semiconductor, Inc.  
WRITE Status Register Instruction (WRSR)  
This instruction provides the ability to write the status register and select among several operating modes.  
Several of the register bits must be set to a low ‘0’ if any of the other bits are written. The timing sequence  
to write to the status register is shown below, followed by the organization of the status register.  
WRITE Status Register Sequence  
CS  
SCK  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
Instruction  
Status Register Data In  
SI  
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-Z  
SO  
Status Register  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
Mode  
0 0 = Word Mode  
(Default)  
Reserved  
Must = 0  
Reserved  
Must = 0  
Hold Function  
0 = Hold (Default)  
1 = No Hold  
1 0 = Page Mode  
0 1 = Burst Mode  
1 1 = Reserved  
11  
This is a developmental specification and is subject to change without notice.