N256S0818HDA/N256S0830HDA
Advance Information
AMI Semiconductor, Inc.
Page and Burst WRITE Sequence
CS
SCK
0
1
2
3
4
5
6
7
8
9
10 11
21 22 23 24 25 26 27 28 29 30 31
Instruction
16-bit address
SI
0
0
0
0
0
0
1
0
15 14 13 12
2
1
0
7
6
5
4
3
2
1
0
ADDR 1
Data In to ADDR 1
SO
High-Z
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Data In to ADDR 2 Data In to ADDR 3
Data In to ADDR n
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
...
High-Z
Page WRITE Sequence
Data Words: sequential, at the end of the page the
address wraps back to the beginning of the page
SI
16-bit address
Page address (X)
Word address (Y)
Page X
Word Y
Page X
Word Y+1 Word Y+2
Page X
Page X
Word 31 Word 0
Page X
Page X
Word 1
SO
High-Z
Burst WRITE Sequence
. . .
. . .
SI
16-bit address
Page address (X)
Word address (Y)
Page X
Word Y
Page X
Word Y+1
Page X
Word 31 Word 0
Page X
Page X
Word 1
Page X
Page X+1 Page X+1
Word Y-1 Word Y Word Y+1
Data Words: sequential, at the end of the page the address wraps to the beginning of the page and
continues incrementing up to the starting word address. At that time, the address increments to the
next page and the burst continues.
SO
High-Z
10
This is a developmental specification and is subject to change without notice.
AMI [ AMI SEMICONDUCTOR ]
