AMIS-42671 High-Speed CAN Transceiver
For Long Networks
7.3 High Communication Speed Range
Data Sheet
The transceiver is primarily intended for industrial applications. It allows very low baud rates needed for long bus length applications.
But also high speed communication is possible up to 1Mbit/s.
7.4 Fail-safe Features
A current-limiting circuit protects the transmitter output stage from damage caused by an accidental short-circuit to either positive or
negative supply voltage, although power dissipation increases during this fault condition.
The pins CANH and CANL are protected from automotive electrical transients (according to “ISO 7637”; see Figure 5). Pin TxD is
pulled high internally should the input become disconnected.
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
V
CC
Supply voltage
V
CANH
DC voltage at pin CANH
V
CANL
DC voltage at pin CANL
V
TxD
DC voltage at pin TxD
V
RxD
DC voltage at pin RxD
V
AUTB
DC voltage at pin AUTB
V
REF
DC voltage at pin V
REF
V
tran(CANH)
Transient voltage at pin CANH
V
tran(CANL)
Transient voltage at pin CANL
V
esd
Latch-up
T
stg
T
amb
T
junc
Notes:
1.
2.
3.
4.
Conditions
0 < V
CC
< 5.25V; no time limit
0 < V
CC
< 5.25V; no time limit
Electrostatic discharge voltage at all pins
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Note 1
Note 1
Note 2
Note 4
Note 3
Min.
-0.3
-45
-45
-0.3
-0.3
-0.3
-0.3
-150
-150
-4
-500
-55
-40
-40
Max.
+7
+45
+45
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
+150
+150
+4
+500
100
+155
+125
+150
Unit
V
V
V
V
V
V
V
V
V
kV
V
mA
°C
°C
°C
Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
Parameter
R
th(vj-a)
Thermal resistance from junction to ambient in SO8 package
R
th(vj-s
)
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
150
45
Unit
K/W
K/W
AMI Semiconductor
– Oct. 07, Rev. 1.0
5
www.amis.com
Specifications subject to change without notice
AMI [ AMI SEMICONDUCTOR ]
