A5191HRT AMIS HART™ Modem
6.0 Electrical Specifications
Table 5: Absolute Maximums
Symbol
T
A
T
S
V
DD
V
IN
, V
OUT
T
L
Cautions:
1. CMOS devices are damaged by high-energy electrostatic discharge. Devices must be stored in conductive foam or with all pins shunted. Precautions
should be taken to avoid application of voltages higher than the maximum rating. Stresses above absolute maximum ratings may result in damage
to the device.
2. Remove power before insertion or removal of this device.
Data Sheet
Parameter
Ambient
Storage temperature
Supply voltage
DC input,output
Re-flow solder profile
Min.
-40
-55
-0.3
-0.3
Max.
+85
150
6.0
V
DD
+0.3
per IPC/JEDEC
J-STD-020C
Units
°C
°C
V
V
°C
Table 6: DC Characteristics
V
DD
= 3.0V to 5.5V, V
SS
= 0V, T
A
= -40°C to +85°C
Symbol
V
IL
V
IH
V
OL
V
OH
Parameter
Input voltage, low
Input voltage
Output voltage, low (I
OL
= 0.67mA)
Output voltage, high (I
OH
= -0.67mA)
Input capacitance
Analog input
IRXA
Digital input
Input leakage current
Output leakage current
Power supply current (RBIAS = 500kW, IAREF = 1.235V)
Analog reference
Carrier detect reference (IAREF - 0.08V)
Comparator bias current (RBIAS = 500kW, IAREF = 1.235V)
3.3
5.0
3.3
5.0
1.2
330
400
1.235
2.5
1.15
2.5
VDD
3.0 - 5.5
3.0 - 5.5
3.0 - 5.5
3.0 - 5.5
2.4
2.9
25
3.5
+500
+10
450
600
2.6
0.7*V
DD
0.4
Min.
Typ.
Max.
0.3*V
DD
Units
V
V
V
V
C
IN
pF
I
IL/IH
I
OLL
I
DD
IAREF
ICDREF*
OCBIAS
nA
mA
mA
V
V
mA
*The HART specification requires carrier detect (OCD) to be active between 80 and 120 mV
p-p
. Setting ICDREF at IAREF - 0.08 V
DC
will set the carrier detect
to a nominal 100 mV
p-p
.
AMI Semiconductor - Rev. 2.0, Mar. 05
www.amis.com
8
AMI [ AMI SEMICONDUCTOR ]
