IC FOR PROXIMITY DETECTOR
ELECTRICAL SPECIFICATIONS
T
amb
= 25°C,
V
CC
= 4.75 to 35 V
Parameter
Supply Current
Symbol
I
CC
Conditions
V
CC
= 4.75V,
I
Rd
= 0µA
V
CC
= 4.75V,
I
Rd
= 220µA
V
CC
= 35V,
I
Rd
= 0µA
Output Source Current
Output Sink Current
Max. Current
Low Output Voltage
High Output Voltage
LED Output Current
Current Short Circuits
I
QL
(res.
I
Q
)
I
QL
I
QL
=
f
(R
S
)
U
QL
U
Q
(res.
U
Q
)
I
LED
I
ON
I
OFF
V
Cabt
= 2V,
V
Rm
= 1V
V
Cabt
= 1V,
V
Rm
= 1V
V
Cabt
= 2V,
V
CC
= 35V
without external
R
S
R
S
= 5Ω
I
ext
= 100 µA
V
Cgl
= 2V,
V
CC
= 4.75V
Min.
0.6
1.2
0.8
100
100
12
0.6
4.45
2.8
250
50
–1.7
4
300
80
–1.2
Typ.
0.9
1.5
1.1
150
150
18
0.9
AM 313
Max.
1.2
1.8
1.5
200
200
1.2
4.75
350
150
–0.7
Unit
mA
mA
mA
µA
µA
mA
V
V
mA
mV
µA
µA
Short Circuit Detection Threshold
U
m
TYPICAL PERFORMANCE CHARACTERISTICS
V
CC
= 5V
Parameter
Scanning Duty Cycle
(in Short Circuit Mode)
T
OFF
T
OFF
/T
ON
Power–On–Delay
Oscillator Frequency
Oscillator Amplitude
Detection Frequency
Detection Distance Res.
Hysteresis Resistor
Det. Distance Temp. Comp. Res.
Rectifier Filter Capacitor
T
abt
f
Osc
V
Osc
f
det
R
d
R
h
R
k
Cgl
ext
R
h
>>
R
d
external
depends on
f
Osc
(Cgl
int
= 150pF)
0
0
150
(f
Osc
= 770kHz,
Q
= 16)
3
30
1.4
Symbol
T
ON
Conditions
C
abt
= 0nF,
U
m
= 1V
C
abt
= 1nF,
U
m
= 1V
C
abt
= 0nF,
U
m
= 1V
C
abt
= 1nF,
U
m
= 1V
C
abt
= 0nF
C
abt
= 1nF
C
abt
= 0nF
C
abt
= 1nF
depends on
LC
res.
0.05
1.2
5
Min.
Typ.
4
21
350
2.0
90
100
380
2.3
2.6
2
µs
ms
MHz
Vpp
kHz
kΩ
kΩ
kΩ
pF
Max.
Unit
µs
µs
µs
ms
analog microelectronics
April 2005
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