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AM29F040B-120JC 参数 Datasheet PDF下载

AM29F040B-120JC图片预览
型号: AM29F040B-120JC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位) CMOS 5.0伏只,统一部门快闪记忆体 [4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory]
分类和应用: 内存集成电路
文件页数/大小: 35 页 / 762 K
品牌: AMD [ AMD ]
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REVISION SUMMARY  
Distinctive Characteristics  
Revision A (May 1997)  
Added 20-year data retention bullet.  
Initial release.  
DC Characterisitics—TTL/NMOS Compatible  
Revision B (January 1998)  
VOH: Changed the parameter description to “Output  
High Voltage” from Output High Level”.  
Global  
Formatted for consistency with other 5.0 volt-only data  
data sheets.  
DC Characteristics—TTL/NMOS Compatible and  
CMOS Compatible  
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifi-  
cations are tested with VCC = VCCmax”.  
Revision B+1 (January 1998)  
AC Characteristics, Erase and Program Operations  
ICC3: Deleted VCC = VCCMax.  
Added Note references to tWHWH1. Corrected the pa-  
rameter symbol for VCC Set-up Time to tVCS; the  
specification is 50 µs minimum. Deleted the last row in  
table.  
Revision C+1 (February 1999)  
Command Definitions  
Command Definitions table: Deleted “XX” from the  
fourth cycle data column of the Sector Protect Verify  
command.  
Revision B+2 (April 1998)  
Distinctive Characteristics  
Changed minimum 100K write/erase cycles guaran-  
teed to 1,000,000.  
Revision C+2 (May 17, 1999)  
Test Specifications Table  
Ordering Infomation  
Corrected the input and output measurement entries in  
the “All others” column.  
Added extended temperature availability to the -55 and  
-70 speed options.  
AC Characteristics  
Revision D (November 15, 1999)  
Erase/Program Operations; Erase and Program Oper-  
ations Alternate CE# Controlled Writes: Corrected the  
notes reference for tWHWH1 and tWHWH2  
These parameters are 100% tested. Corrected the note  
reference for tVCS. This parameter is not 100% tested.  
AC Characteristics—Figure 9. Program Operations  
Timing and Figure 10. Chip/Sector Erase  
Operations  
.
Deleted tGHWL and changed OE# waveform to start at  
high.  
Erase and Programming Performance  
Physical Dimensions  
Changed minimum 100K program and erase cycles  
guaranteed to 1,000,000.  
Replaced figures with more detailed illustrations.  
Revision E (November 29, 2000)  
Revision C (January 1999)  
Global  
Added table of contents.  
Ordering Information  
Updated for CS39S process technology.  
Deleted burn-in option.  
Trademarks  
Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved.  
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.  
ExpressFlash is a trademark of Advanced Micro Devices, Inc.  
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.  
Am29F040B  
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