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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
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READ ONLY MODE  
When VPP is less than VCC + 2 V, the command register  
is inactive. The device can either read array or autose-  
lect data, or be standby mode.  
Output Disable  
Output from the device is disabled when OE# is at a  
logic high level. When disabled, output pins are in a  
high impedance state.  
Read  
The device functions as a read only memory when VPP  
< VCC + 2 V. The device has two control functions. Both  
must be satisfied in order to output data. CE# controls  
power to the device. This pin should be used for spe-  
cific device selection. OE# controls the device outputs  
and should be used to gate data to the output pins if a  
device is selected.  
Auto Select  
Flash memories can be programmed in-system or in a  
standard PROM programmer. The device may be sol-  
dered to the circuit board upon receipt of shipment and  
programmed in-system. Alternatively, the device may  
initially be programmed in a PROM programmer prior  
to soldering the device to the board.  
Address access time tACC is equal to the delay from  
stable addresses to valid output data. The chip enable  
access time tCE is the delay from stable addresses and  
stable CE# to valid data at the output pins. The output  
enable access time is the delay from the falling edge of  
OE# to valid data at the output pins (assuming the ad-  
dresses have been stable at least tACC–tOE).  
The Auto select mode allows the reading out of a binary  
code from the device that will identify its manufacturer  
and type. This mode is intended for the purpose  
of automatically matching the device to be pro-  
grammed with its corresponding programming algo-  
rithm. This mode is functional over the entire  
temperature range of the device.  
Standby Mode  
Programming In A PROM Programmer  
The device has two standby modes. The CMOS  
standby mode (CE# input held at VCC ± 0.5 V), con-  
sumes less than 100 µA of current. TTL standby mode  
To activate this mode, the programming equipment  
must force VID (11.5 V to 13.0 V) on address A9. Two  
identifier bytes may then be sequenced from the device  
outputs by toggling address A0 from VIL to VIH. All other  
address lines must be held at VIL, and VPP must be  
less than or equal to VCC + 2.0 V while using this Auto  
select mode. Byte 0 (A0 = VIL) represents the manufac-  
turer code and byte 1 (A0 = VIH) the device identifier  
code. For the device these two bytes are given in Table  
2 below. All identifiers for manufacturer and device  
codes will exhibit odd parity with the MSB (DQ7) de-  
fined as the parity bit.  
(CE# is held at V ) reduces the current requirements  
IH  
to less than 1mA. When in the standby mode the out-  
puts are in a high impedance state, independent of the  
OE# input.  
If the device is deselected during erasure, program-  
ming, or program/erase verification, the device will  
draw active current until the operation is terminated.  
Table 2. Am28F256 Auto Select Code  
Code  
(HEX)  
Type  
A0  
Manufacturer Code  
Device Code  
V
01  
IL  
V
A1  
IH  
Am28F256  
9