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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
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VCC < VLKO (see DC Characteristics section for  
voltages). When VCC < VLKO, the command register is  
disabled, all internal program/erase circuits are  
disabled, and the device resets to the read mode. The  
device ignores all writes until VCC > VLKO. The user  
must ensure that the control pins are in the correct logic  
state when VCC > VLKO to prevent uninitentional writes.  
Logical Inhibit  
Writing is inhibited by holding any one of OE# = VIL, CE#  
= VIH or WE# = VIH. To initiate a write cycle CE# and  
WE# must be a logical zero while OE# is a logical one.  
Power-Up Write Inhibit  
Power-up of the device with WE# = CE# = VIL and  
OE# = VIH will not accept commands on the rising  
edge of WE#. The internal state machine is automat-  
ically reset to the read mode on power-up.  
Write Pulse “Glitch” Protection  
Noise pulses of less than 10 ns (typical) on OE#, CE#  
or WE# will not initiate a write cycle.  
FUNCTIONAL DESCRIPTION  
Description Of User Modes  
Table 1. Am28F256 Device Bus Operations (Notes 7 and 8)  
#
#
#
WE  
CE  
OE  
V
PP  
#
#
#
Operation  
(E )  
(G )  
(W ) (Note 1)  
A0  
A0  
X
A9  
A9  
X
I/O  
Read  
V
V
X
X
V
V
V
D
OUT  
IL  
IL  
PPL  
PPL  
PPL  
Standby  
V
X
HIGH Z  
IH  
Output Disable  
V
V
V
V
X
X
HIGH Z  
IL  
IL  
IH  
IH  
IH  
Read-Only  
Auto-select Manufacturer  
Code (Note 2)  
V
CODE  
(01h)  
ID  
V
V
V
V
IL  
PPL  
PPL  
IL  
(Note 3)  
Auto-select Device  
Code (Note 2)  
V
CODE  
(A1h)  
ID  
V
V
V
V
V
V
V
V
V
IL  
IL  
IL  
IL  
IH  
IH  
IH  
(Note 3)  
Read  
A0  
A9  
D
PPH  
OUT  
(Note 4)  
Standby (Note 5)  
Output Disable  
Write  
V
X
X
V
V
V
X
X
X
X
HIGH Z  
HIGH Z  
IH  
PPH  
PPH  
PPH  
Read/Write  
Legend:  
V
V
V
V
V
IL  
IL  
IH  
IH  
IH  
V
A0  
A9  
D
IL  
IN  
(Note 6)  
X = Don’t care, where Don’t Care is either V or V levels. V  
= V < V + 2 V. See DC Characteristics for voltage levels  
PP CC  
IL  
IH  
PPL  
of V  
. 0 V < An < V + 2 V, (normal TTL or CMOS input levels, where n = 0 or 9).  
PPH  
CC  
Notes:  
1.  
V
may be grounded, connected with a resistor to ground, or < V + 2.0 V. V  
is the programming voltage specified for  
PPL  
CC  
PPH  
the device. Refer to the DC characteristics. When V = V  
, memory contents can be read but not written or erased.  
PP  
PPL  
2. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 2.  
3. 11.5 < V < 13.0 V. Minimum V rise time and fall time (between 0 and V voltages) is 500 ns.  
ID  
ID  
ID  
4. Read operation with V = V  
may access array data or the Auto select codes.  
PP  
PPH  
5. With V at high voltage, the standby current is I + I (standby).  
PP  
CC  
PP  
6. Refer to Table 3 for valid D during a write operation.  
IN  
7. All inputs are Don’t Care unless otherwise stated, where Don’t Care is either V or V levels. In the Auto select mode all  
IL  
IH  
addresses except A and A must be held at V .  
9
0
IL  
8. If V 1.0 Volt, the voltage difference between V and V should not exceed 10.0 volts. Also, the Am28F256 has a V  
PP  
CC  
PP  
CC  
rise time and fall time specification of 500 ns minimum.  
8
Am28F256