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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
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SWITCHING TEST WAVEFORMS  
3 V  
0 V  
2.4 V  
2.0 V  
0.8 V  
2.0 V  
0.8 V  
Test Points  
1.5 V  
Test Points  
1.5 V  
0.45 V  
Input  
Output  
Input  
Output  
AC Testing (all speed options except -70): Inputs are driven at  
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise  
and fall times are 10 ns.  
AC Testing for -70 devices: Inputs are driven at 3.0 V for a  
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times  
are 10 ns.  
11560G-15  
SWITCHING CHARACTERISTICS over operating range unless otherwise specified  
AC Characteristics—Read Only Operation  
Parameter Symbols  
JEDEC Standard  
Am28F256 Speed Options  
Parameter Description  
Read Cycle Time (Note 2)  
-70  
70  
70  
70  
35  
-90  
90  
90  
90  
35  
-120  
120  
120  
120  
50  
-150  
150  
150  
150  
55  
-200  
200  
200  
200  
55  
Unit  
ns  
t
t
Min  
Max  
Max  
Max  
AVAV  
RC  
t
t
Chip Enable AccessTime  
Address Access Time  
ns  
ELQV  
CE  
t
t
ns  
AVQV  
GLQV  
ACC  
t
t
Output Enable Access Time  
ns  
OE  
Chip Enable to Output in Low Z  
(Note 2)  
t
t
Min  
Max  
Min  
0
20  
0
0
20  
0
0
30  
0
0
35  
0
0
35  
0
ns  
ns  
ns  
ns  
ELQX  
EHQZ  
GLQX  
GHQZ  
LZ  
Chip Disable to Output in High Z  
(Note 1)  
t
t
t
DF  
Output Enable to Output in Low Z  
(Note 2)  
t
OLZ  
Output Disable to Output in High Z  
(Note 2)  
t
t
Max  
20  
20  
30  
35  
35  
DF  
Output Hold from first of Address,  
CE#, or OE# Change (Note 2)  
t
t
Min  
Min  
Min  
0
6
0
6
0
6
0
6
0
6
ns  
µs  
µs  
AXQX  
OH  
t
Write Recovery Time before Read  
WHGL  
V
Setup Time to Valid Read  
CC  
t
50  
50  
50  
50  
50  
VCS  
(Note 2)  
Notes:  
1. Guaranteed by design not tested.  
2. Not 100% tested.  
26  
Am28F256  
 
 
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