D A T A S H E E T
DC CHARACTERISTICS
Table 7. CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
±1.0
35
Unit
µA
V
V
IN = VSS to VCC
,
ILI
Input Load Current
CC = VCC max
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 11.0 V
µA
V
V
OUT = VSS to VCC
,
±1.0
µA
CC = VCC max
5 MHz
1 MHz
5 MHz
1 MHz
5
1
5
1
10
3
CE# = VIL, OE# = VIH,
Byte Mode
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
10
3
CE# = VIL, OE# = VIH,
Word Mode
VCC Active Write Current
(Notes 2, 3, 5)
ICC2
CE# = VIL, OE# = VIH
15
30
mA
ICC3
ICC4
VCC Standby Current (Note 2)
VCC Reset Current (Note 2)
CE#, RESET# = VCC ± 0.2 V
RESET# = VSS ± 0.2 V
VIH = VCC ± 0.2 V;
0.2
0.2
5
5
µA
µA
Automatic Sleep Mode
(Notes 2, 3)
ICC5
0.2
5
µA
V
IL = VSS ± 0.2 V
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.3 x VCC
VCC + 0.3
V
V
0.7 x VCC
Voltage for Autoselect and
Temporary Sector Unprotect
VID
V
CC = 2.0 V
9.0
11.0
V
VOL1
VOL2
VOH1
VOH2
VLKO
I
OL = 2.0 mA, VCC = VCC min
IOL = 100 μA, VCC = VCC min
OH = –2.0 mA, VCC = VCC min
IOH = –100 μA, VCC = VCC min
0.25
0.1
V
V
V
V
V
Output Low Voltage
I
0.85 x VCC
VCC–0.1
1.2
Output High Voltage
Low VCC Lock-Out Voltage (Note 4)
1.5
Notes:
1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIH. Typical VCC is 2.0 V.
2. The maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 50 ns.
5. Not 100% tested.
January 23, 2007 27546A6
Am29SL800D
25
AMD [ AMD ]
