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A800DB90PF 参数 Datasheet PDF下载

A800DB90PF图片预览
型号: A800DB90PF
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 1.8伏只超低电压闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 1066 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
ERASE AND PROGRAMMING PERFORMANCE  
Table 16. Erase and Programming Performance  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
s
Comments  
Sector Erase Time  
Chip Erase Time  
0.7  
14  
5
15  
Excludes00hprogrammingprior  
to erasure (Note 4)  
s
Byte Programming Time  
150  
210  
16  
µs  
µs  
s
Word Programming Time  
Byte Mode  
Word Mode  
7
Excludes system level overhead  
(Note 5)  
5.3  
3.7  
Chip Programming Time  
(Note 3)  
11  
s
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 2.0 V VCC, 1,000,000 cycles. Additionally, programming typicals  
assume checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster  
than the maximum program times listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 for further  
information on command definitions.  
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.  
Table 17. Latchup Characteristics  
Description  
Min  
Max  
Input voltage with respect to VSS on all pins except I/O pins  
(including A9, OE#, and RESET#)  
–1.0 V  
11.0 V  
Input voltage with respect to VSS on all I/O pins  
–0.5 V  
VCC + 0.5 V  
+100 mA  
V
CC Current  
–100 mA  
Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time.  
Table 18. TSOP Pin Capacitance  
Parameter Symbol  
Parameter Description  
Input Capacitance  
Test Setup  
VIN = 0  
Typ  
6
Max  
7.5  
12  
Unit  
pF  
CIN  
COUT  
CIN2  
Output Capacitance  
Control Pin Capacitance  
VOUT = 0  
VIN = 0  
8.5  
7.5  
pF  
9
pF  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0 MHz.  
Table 19. Data Retention  
Parameter  
Test Conditions  
150°C  
Min  
10  
Unit  
Years  
Years  
Minimum Pattern Data Retention Time  
125°C  
20  
January 23, 2007 27546A6  
Am29SL800D  
39  
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