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A400DT10VF 参数 Datasheet PDF下载

A400DT10VF图片预览
型号: A400DT10VF
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 1.8伏只超低电压闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 41 页 / 775 K
品牌: AMD [ AMD ]
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A D V A N C E I N F O R M A T I O N  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the  
device bus operations, which are initiated through the  
internal command register. The command register  
itself does not occupy any addressable memory loca-  
tion. The register is composed of latches that store the  
commands, along with the address and data informa-  
tion needed to execute the command. The contents of  
the register serve as inputs to the internal state  
machine. The state machine outputs dictate the func-  
tion of the device. Table 1 lists the device bus opera-  
tions, the inputs and control levels they require, and the  
resulting output. The following subsections describe  
each of these operations in further detail.  
Table 1. Am29SL400D Device Bus Operations  
DQ8–DQ15  
BYTE#  
Addresses  
(Note 1)  
DQ0– BYTE#  
Operation  
CE# OE# WE# RESET#  
DQ7  
= V  
= V  
IH  
IL  
Read  
Write  
L
L
L
H
L
H
H
A
A
D
D
OUT  
IN  
IN  
OUT  
DQ8–DQ14 = High-Z,  
DQ15 = A-1  
H
D
D
IN  
IN  
V
0.2 V  
±
V
0.2 V  
±
CC  
CC  
Standby  
X
X
X
High-Z High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
High-Z High-Z  
High-Z High-Z  
High-Z  
High-Z  
X
Sector Address,  
A6 = L, A1 = H,  
A0 = L  
Sector Protect (Note 2)  
L
H
L
V
D
X
X
X
ID  
IN  
Sector Address,  
A6 = H, A1 = H,  
A0 = L  
Sector Unprotect (Note 2)  
L
H
X
L
V
V
D
D
X
ID  
ID  
IN  
IN  
Temporary Sector Unprotect  
X
X
A
D
High-Z  
IN  
IN  
Legend:  
L = Logic Low = V , H = Logic High = V , V = 10 ± ±1.0 V, X = Don’t Care, A = Address In, D = Data In, D = Data Out  
IL  
IH  
ID  
IN  
IN  
OUT  
Notes:  
1. Addresses are A17:A0 in word mode (BYTE# = V ), A17:A-1 in byte mode (BYTE# = V ).  
IH  
IL  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector  
Protection/Unprotection” section.  
control and selects the device. OE# is the output  
control and gates array data to the output pins. WE#  
Word/Byte Configuration  
The BYTE# pin controls whether the device data I/O  
pins DQ15–DQ0 operate in the byte or word configura-  
tion. If the BYTE# pin is set at logic ‘1’, the device is in  
word configuration, DQ15–DQ0 are active and con-  
trolled by CE# and OE#.  
should remain at V . The BYTE# pin determines  
IH  
whether the device outputs array data in words or  
bytes.  
The internal state machine is set for reading array data  
upon device power-up, or after a hardware reset. This  
ensures that no spurious alteration of the memory  
content occurs during the power transition. No  
command is necessary in this mode to obtain array  
data. Standard microprocessor read cycles that assert  
valid addresses on the device address inputs produce  
valid data on the device data outputs. The device  
remains enabled for read access until the command  
register contents are altered.  
If the BYTE# pin is set at logic ‘0’, the device is in byte  
configuration, and only data I/O pins DQ0–DQ7 are  
active and controlled by CE# and OE#. The data I/O  
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is  
used as an input for the LSB (A-1) address function.  
Requirements for Reading Array Data  
To read array data from the outputs, the system must  
drive the CE# and OE# pins to V . CE# is the power  
IL  
8
Am29SL400D  
Rev. A Amend. +1 April 13, 2005  
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