A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
= V to V
Min
Typ
Max
± 1.0
35
Unit
µA
V
V
,
CC
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 11.0 V
µA
LIT
CC
CC max
V
V
= V to V
,
CC
OUT
SS
I
± 1.0
µA
LO
= V
CC
CC max
5 MHz
1 MHz
5 MHz
1 MHz
5
1
5
1
10
3
CE# = V OE#
Byte Mode
V
IL,
=
=
IH,
IH,
V
Active Read Current
CC
I
mA
CC1
(Notes 1, 2)
10
3
CE# = V OE#
V
IL,
Word Mode
V
Active Write Current
CC
I
CE# = V OE#
V
15
30
mA
CC2
IL,
=
IH
(Notes 2, 3, 5)
I
I
V
V
Standby Current (Note 2)
CE#, RESET# = V ± ±0.2 V
0.2
0.2
5
5
µA
µA
CC3
CC
CC
CC
Reset Current (Note 2)
RESET# = V ± ±0.2 V
CC4
SS
Automatic Sleep Mode
(Notes 2, 3)
V
V
= V ± ±0.2 V;
IH
IL
CC
I
0.2
5
µA
CC5
= V ± ±0.2 V
SS
V
Input Low Voltage
Input High Voltage
–0.5
0.3 x V
V
V
IL
CC
V
0.7 x V
V
+ 0.3
IH
CC
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
V
= 2.0 V
9.0
11.0
V
ID
CC
V
V
I
I
I
I
= 2.0 mA, V = V
0.25
0.1
V
V
V
V
OL1
OL2
OH1
OH2
OL
OL
OH
OH
CC
CC min
CC min
Output Low Voltage
Output High Voltage
= 100 µA, V = V
CC
V
V
= –2.0 mA, V = V
0.85 x V
CC
CC
CC min
CC min
= –100 µA, V = V
V
–0.1
CC
CC
Low V Lock-Out Voltage
(Note 4)
CC
V
1.2
1.5
V
LKO
Notes:
1. The I current listed is typically less than 1 mA/MHz, with OE# at V . Typical V is 2.0 V.
CC
IH
CC
2. The maximum I specifications are tested with V = V max.
CC
CC
CC
3. I active while Embedded Erase or Embedded Program is in progress.
CC
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
5. Not 100% tested.
+ 50 ns.
ACC
April 13, 2005 Rev. A Amend. +1
Am29SL400D
23
AMD [ AMD ]
