D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
s
Comments
Sector Erase Time
Chip Erase Time
2
38
10
12
5
15
Excludes 00h programming prior to
erasure (Note 4)
s
Byte Programming Time
Word Programming Time
300
360
40
µs
µs
s
Excludes system level overhead
(Note 5)
Byte Mode
Word Mode
Chip Programming Time
(Note 3)
3.5
30
s
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 2.0 V V , 1,000,000 cycles. Additionally, programming typicals assume
CC
checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than
the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 on page 18
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
38
Am29SL400C
Am29SL400C_00_A6 January 23, 2007
AMD [ AMD ]
