DATA SHEET
Am29SL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-only Super Low Voltage Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
SOFTWARE FEATURES
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Secured Silicon (SecSi) Sector: 256-byte sector
■
Supports Common Flash Memory Interface (CFI)
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
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Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
— Customer lockable: Customer may program own
custom data. Once locked, data cannot be changed
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
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Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
HARDWARE FEATURES
Package options
— 48-ball FBGA
— 48-pin TSOP
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
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■
■
Top or bottom boot block
Manufactured on 0.32 µm process technology
Compatible with JEDEC standards
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■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
— Pinout and software compatible with single-power-
supply flash standard
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast 100 ns
— Acceleration (ACC) function accelerates program
timing
— Program time: 8 µs/word typical using Accelerate
■
Sector protection
— Hardware method of locking a sector, either in-
system or using programming equipment, to prevent
any program or erase operation within that sector
■
Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
— 1 µA in standby or automatic sleep mode
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Minimum 1 million erase cycles guaranteed per
sector
20 Year data retention at 125°C
— Reliable operation for the life of the system
Publication# 21635 Rev: C Amendment/5
Issue Date: January 23, 2007
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
AMD [ AMD ]
