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A160CB12VF 参数 Datasheet PDF下载

A160CB12VF图片预览
型号: A160CB12VF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 1.8伏只超低电压闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1031 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the  
device bus operations, which are initiated through the  
internal command register. The command register  
itself does not occupy any addressable memory loca-  
tion. The register is composed of latches that store the  
commands, along with the address and data informa-  
tion needed to execute the command. The contents of  
the register serve as inputs to the internal state  
machine. The state machine outputs dictate the func-  
tion of the device. Table 1 lists the device bus  
operations, the inputs and control levels they require,  
and the resulting output. The following subsections  
describe each of these operations in further detail.  
Table 1. Am29SL160C Device Bus Operations  
DQ8–DQ15  
DQ0– BYTE# BYTE#  
Addresses  
(Note 1)  
Operation  
CE# OE# WE# RESET# WP#/ACC  
DQ7  
= VIH  
= VIL  
Read  
Write  
(Program/Erase)  
L
L
H
H
X
AIN  
DOUT  
DOUT  
DQ8–DQ14 = High-Z,  
DQ15 = A-1  
L
H
L
H
(Note 3)  
AIN  
DIN  
DIN  
VCC  
0.2 V  
VCC  
0.2 V  
Standby  
X
X
X
X
High-Z High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
X
X
High-Z High-Z  
High-Z High-Z  
High-Z  
High-Z  
X
Sector Address,  
A6 = L, A1 = H,  
A0 = L  
Sector Protect  
(Note 2)  
L
H
L
VID  
X
DIN  
X
X
Sector Address,  
(Note 3) A6 = H, A1 = H,  
A0 = L  
Sector Unprotect  
(Note 2)  
L
H
X
L
VID  
VID  
DIN  
DIN  
X
X
Temporary Sector  
Unprotect  
X
X
(Note 3)  
AIN  
DIN  
High-Z  
Legend:  
L = Logic Low = VIL, H = Logic High = VIH, VID = 10 1.0 V, VHH = 10 0.ꢀ V, X = Don’t Care, AIN = Address In, DIN = Data In,  
DOUT = Data Out  
Notes:  
1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL).  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See “Sector/Sector  
Block Protection and Unprotection” on page 1ꢀ.  
3. If WP#/ACC = VIL, the two outermost boot sectors are protected. If WP#/ACC = VIH, the two outermost boot sectors are  
protected or unprotected as previously set by the system. If WP#/ACC = VHH, all sectors, including the two outermost boot  
sectors, are unprotected.  
Word/Byte Configuration  
Requirements for Reading Array Data  
The BYTE# pin controls whether the device data I/O  
pins DQ15–DQ0 operate in the byte or word configura-  
tion. If the BYTE# pin is set at logic ‘1’, the device is in  
word configuration, DQ15–DQ0 are active and con-  
trolled by CE# and OE#.  
To read array data from the outputs, the system must  
drive the CE# and OE# pins to VIL. CE# is the power  
control and selects the device. OE# is the output  
control and gates array data to the output pins. WE#  
should remain at VIH. The BYTE# pin determines  
whether the device outputs array data in words or  
bytes.  
If the BYTE# pin is set at logic ‘0’, the device is in byte  
configuration, and only data I/O pins DQ0–DQ7 are  
active and controlled by CE# and OE#. The data I/O  
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is  
used as an input for the LSB (A-1) address function.  
The internal state machine is set for reading array data  
upon device power-up, or after a hardware reset. This  
ensures that no spurious alteration of the memory  
content occurs during the power transition. No  
command is necessary in this mode to obtain array  
January 23, 2007 21635C5  
Am29SL160C  
9
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