Chapter 10: Replacing Serial EEPROMs with MAX II User Flash Memory
10–11
Conclusion
Table 10–12. STMicroelectronics Device Characteristics (Part 2 of 2)
Interface
SCI SPI 2-Wire 3-Wire I C Microwire
Operating
Size
Voltage (V)
2
Type
Device
(Bits)
8,192
4,096
2,048
fMAX
(1)
EEPROM
EEPROM
EEPROM
M95080-R
M95040-S
M95020-S
—
—
—
v
v
v
—
—
—
—
—
—
—
—
—
—
—
—
10 MHz
5 MHz
5 MHz
1.8 to 5.5
1.8 to 3.6
1.8 to 3,6
Note to Table 10–12:
(1) The MAX II device supports two different VCCINT of operating voltage ranges, which are 2.375 to 2.625 V, and 3.0 to 3.6 V; the MAX IIG device
supports the 1.71 to 1.89 V operating voltage range.
Table 10–13. Toshiba Corporation Device Characteristics
Interface
Size
(Bits)
Operating
Voltage (V) (1)
2
Type
Device
SCI 4-Wire 2-Wire 3-Wire I C Microwire
fMAX
EEPROM TC9WMA2FK 2,048
EEPROM TC9WMB2FK 2,048
Note to Table 10–13:
—
v
—
v
—
—
1 MHz Read: 1.8 ~ 5.5
Write: 2.3 ~ 5.5
—
—
—
—
v
—
400 kHz Read: 1.8 ~ 5.5
Write: 2.3 ~ 5.5
(1) The MAX II device supports two different VCCINT of operating voltage ranges, which are 2.375 to 2.625 V, and 3.0 to 3.6 V; the MAX IIG device
supports the 1.71 to 1.89 V operating voltage range.
Conclusion
MAX II devices can be used to incorporate logic and memory devices on a design
board, eliminating chip-to-chip delays, minimizing board space, and reducing total
system cost. Since you can program the UFM block to suit your needs, MAX II devices
offer more interface flexibility than an off-the-shelf EEPROM device.
Referenced Documents
This chapter references the following documents:
■
■
DC and Switching Characteristics chapter in the MAX II Device Handbook
Using User Flash Memory in MAX II Devices chapter in the MAX II Device Handbook
© October 2008 Altera Corporation
MAX II Device Handbook