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EPCS16SI8N 参数 Datasheet PDF下载

EPCS16SI8N图片预览
型号: EPCS16SI8N
PDF下载: 下载PDF文件 查看货源
内容描述: 串行配置器件 [Serial Configuration Devices]
分类和应用: 存储内存集成电路光电二极管过程控制系统PCSLTE可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 38 页 / 686 K
品牌: ALTERA [ ALTERA CORPORATION ]
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3–14  
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Chapter 3: Serial Configuration Devices (EPCS1, EPCS4, EPCS16, EPCS64, and EPCS128) Data Sheet  
Serial Configuration Device Memory Access  
Table 3–6. Address Range for Sectors in EPCS4 (Part 2 of 2)  
Address Range (Byte Addresses in HEX)  
Sector  
Start  
End  
1
0
H'10000  
H'00000  
H'1FFFF  
H'0FFFF  
Table 3–7. Address Range for Sectors in EPCS1  
Address Range (Byte Addresses in HEX)  
Sector  
Start  
End  
3
2
1
0
H'18000  
H'10000  
H'08000  
H'00000  
H'1FFFF  
H'17FFF  
H'0FFFF  
H'07FFF  
Operation Codes  
This section describes the operations that can be used to access the memory in serial  
configuration devices. The DATA, DCLK, ASDI, and nCSsignals access the memory in  
serial configuration devices. All serial configuration device operation codes,  
addresses and data are shifted in and out of the device serially, with the most  
significant bit (MSB) first.  
The device samples the active serial data input on the first rising edge of the DCLK  
after the active low chip select (nCS) input signal is driven low. Shift the operation  
code (MSB first) serially into the serial configuration device through the active serial  
data input (ASDI) pin. Each operation code bit is latched into the serial configuration  
device on the rising edge of the DCLK.  
Different operations require a different sequence of inputs. While executing an  
operation, you must shift in the desired operation code, followed by the address  
bytes, data bytes, both, or neither. The device must drive nCShigh after the last bit of  
the operation sequence is shifted in. Table 3–8 lists the operation sequence for every  
operation supported by the serial configuration devices.  
For the read byte, read status, and read silicon ID operations, the shifted-in operation  
sequence is followed by data shifted out on the DATApin. You can drive the nCSpin  
high after any bit of the data-out sequence is shifted out.  
For the write byte, erase bulk, erase sector, write enable, write disable, and write  
status operations, drive the nCSpin high exactly at a byte boundary (drive the nCS  
pin high a multiple of eight clock pulses after the nCSpin is driven low); otherwise,  
the operation is rejected and is not executed.  
All attempts to access the memory contents while a write or erase cycle is in progress  
will not be granted, and the write or erase cycle will continue unaffected.  
Configuration Handbook (Complete Two-Volume Set)  
© December 2009 Altera Corporation