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EP3C25F256C8NES 参数 Datasheet PDF下载

EP3C25F256C8NES图片预览
型号: EP3C25F256C8NES
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 24624 CLBs, 472.5MHz, PBGA256, 17 X 17 MM, 1.55 MM HEIGHT, 1 MM PITCH, LEAD FREE, FBGA-256]
分类和应用: 时钟可编程逻辑
文件页数/大小: 34 页 / 367 K
品牌: ALTERA [ ALTERA CORPORATION ]
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1–2
Chapter 1: Cyclone III Device Data Sheet
Electrical Characteristics
Table 1–1.
Cyclone III Devices Absolute Maximum Ratings
Symbol
I
OUT
V
ES DHBM
V
ES DCDM
T
S TG
T
J
Parameter
DC output current, per pin
Electrostatic discharge voltage using the human
body model
Electrostatic discharge voltage using the
charged device model
Storage temperature
Operating junction temperature
(Note 1)
Min
–25
–65
–40
(Part 2 of 2)
Max
40
±2000
±500
150
125
Unit
mA
V
V
°C
°C
Note to
(1) Supply voltage specifications apply to voltage readings taken at the device pins with respect to ground, not at the
power supply.
Maximum Allowed Overshoot or Undershoot Voltage
During transitions, input signals may overshoot to the voltage listed in
and
undershoot to –2.0 V for a magnitude of currents less than 100 mA and for periods
shorter than 20 ns.
lists the maximum allowed input overshoot voltage and
the duration of the overshoot voltage as a percentage over the lifetime of the device.
The maximum allowed overshoot duration is specified as percentage of high-time
over the lifetime of the device.
1
A DC signal is equivalent to 100% duty cycle. For example, a signal that overshoots to
4.2 V can only be at 4.2 V for 10.74% over the lifetime of the device; for device lifetime
of 10 years, this amounts to 10.74/10ths of a year.
© January 2010
Altera Corporation