I/O Structure
and DM pins to support a DDR SDRAM or FCRAM interface. I/O bank
1 can also support a DDR SDRAM or FCRAM interface, however, the
configuration input pins in I/O bank 1 must operate at 2.5 V. I/O bank 3
can also support a DDR SDRAM or FCRAM interface, however, all the
JTAG pins in I/O bank 3 must operate at 2.5 V.
Figure 2–35. Cyclone I/O Banks
Notes (1), (2)
I/O Bank 2
I/O Bank 1
Also Supports
the 3.3-V PCI
I/O Standard
I/O Bank 3
Also Supports
the 3.3-V PCI
I/O Standard
All I/O Banks Support
■ 3.3-V LVTTL/LVCMOS
■ 2.5-V LVTTL/LVCMOS
■ 1.8-V LVTTL/LVCMOS
■ 1.5-V LVCMOS
I/O Bank 1
I/O Bank 3
■ LVDS
■ RSDS
■ SSTL-2 Class I and II
■ SSTL-3 Class I and II
Individual
Power Bus
I/O Bank 4
Notes to Figure 2–35:
(1) Figure 2–35 is a top view of the silicon die.
(2) Figure 2–35 is a graphic representation only. Refer to the pin list and the Quartus II software for exact pin locations.
Each I/O bank has its own VCCIOpins. A single device can support 1.5-V,
1.8-V, 2.5-V, and 3.3-V interfaces; each individual bank can support a
different standard with different I/O voltages. Each bank also has dual-
purpose VREFpins to support any one of the voltage-referenced
standards (e.g., SSTL-3) independently. If an I/O bank does not use
voltage-referenced standards, the VREF pins are available as user I/O pins.
Altera Corporation
January 2007
2–53
Preliminary