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CLK12P 参数 Datasheet PDF下载

CLK12P图片预览
型号: CLK12P
PDF下载: 下载PDF文件 查看货源
内容描述: 的Stratix II器件手册,卷1 [Stratix II Device Handbook, Volume 1]
分类和应用:
文件页数/大小: 768 页 / 5210 K
品牌: ALTERA [ ALTERA CORPORATION ]
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External Memory Interfaces in Stratix II and Stratix II GX Devices  
Figure 3–12. DQS Update Enable Waveform  
DLL Counter Update  
(Every Eight Cycles)  
DLL Counter Update  
(Every Eight Cycles)  
System Clock  
DQS Delay Settings  
6 bit  
(Updated every 8 cycles)  
Update Enable  
Circuitry Output  
DQS Postamble Circuitry  
For external memory interfaces that use a bidirectional read strobe like  
DDR and DDR2 SDRAM, the DQS signal is low before going to or coming  
from a high-impedance state. See Figure 3–3. The state where DQS is low,  
just after a high-impedance state, is called the preamble and the state  
where DQS is low, just before it returns to a high-impedance state, is  
called the postamble. There are preamble and postamble specifications  
for both read and write operations in DDR and DDR2 SDRAM. The DQS  
postamble circuitry ensures data is not lost when there is noise on the  
DQS line at the end of a read postamble time. It is to be used with one of  
the DQS IOE input registers such that the DQS postamble control signal  
can ground the shifted DQS signal used to clock the DQ input registers at  
the end of a read operation. This ensures that any glitches on the DQS  
input signals at the end of the read postamble time do not affect the DQ  
IOE registers.  
f
See AN 327: Interfacing DDR SDRAM with Stratix II Devices and AN 328:  
Interfacing DDR2 SDRAM with Stratix II Devices for more details.  
DDR Registers  
Each IOE in a Stratix II or Stratix II GX device contains six registers and  
one latch. Two registers and a latch are used for input, two registers are  
used for output, and two registers are used for output enable control. The  
second output enable register provides the write preamble for the DQS  
strobe in the DDR external memory interfaces. This active low output  
enable register extends the high-impedance state of the pin by a half clock  
cycle to provide the external memory’s DQS write preamble time  
specification. Figure 3–13 shows the six registers and the latch in the  
Stratix II or Stratix II GX IOE and Figure 3–14 shows how the second OE  
register extends the DQS high-impedance state by half a clock cycle  
during a write operation.  
Altera Corporation  
January 2008  
3–31  
Stratix II Device Handbook, Volume 2  
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