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CLK12P 参数 Datasheet PDF下载

CLK12P图片预览
型号: CLK12P
PDF下载: 下载PDF文件 查看货源
内容描述: 的Stratix II器件手册,卷1 [Stratix II Device Handbook, Volume 1]
分类和应用:
文件页数/大小: 768 页 / 5210 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Embedded Memory Blocks in Stratix II and Stratix II GX Devices  
In true dual-port configuration, the RAM outputs can only be configured  
for read-during-write mode. This means that during write operation,  
data being written to the A or B port of the RAM flows through to the A  
or B outputs, respectively. When the output registers are bypassed, the  
new data is available on the rising edge of the same clock cycle on which  
it was written. Refer to “Read-During-Write Operation at the Same  
Address” on page 2–33 for waveforms and information on mixed-port  
read-during-write mode.  
Potential write contentions must be resolved external to the RAM because  
writing to the same address location at both ports results in unknown  
data storage at that location. For a valid write operation to the same  
address of the M-RAM block, the rising edge of the write clock for port A  
must occur following the maximum write cycle time interval after the  
rising edge of the write clock for port B. Data is written on the rising edge  
of the write clock for the M-RAM block.  
Because data is written into the M512 and M4K blocks at the falling edge  
of the write clock, the rising edge of the write clock for port A should  
occur following half of the maximum write cycle time interval after the  
falling edge of the write clock for port B. If this timing is not met, the data  
stored in that particular address will be invalid.  
f
Refer to the Stratix II Device Family Data Sheet (volume 1) of the Stratix II  
Device Handbook or the Stratix II GX Device Family Data Sheet (volume 1)  
of the Stratix II GX Device Handbook for the maximum synchronous write  
cycle time.  
Altera Corporation  
January 2008  
2–17  
Stratix II Device Handbook, Volume 2  
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