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AS7C1024-35TC 参数 Datasheet PDF下载

AS7C1024-35TC图片预览
型号: AS7C1024-35TC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 8 页 / 294 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C1024  
AC test conditions  
– Output load: see Figure B,  
Thevenin Equivalent:  
except for t and t see Figure C.  
CLZ  
CHZ  
168Ω  
D
+1.728V  
– Input pulse level: GND to 3.0V. See Figure A.  
– Input rise and fall times: 5 ns. See Figure A.  
– Input and output timing reference levels: 1.5V.  
out  
+5V  
+5V  
480Ω  
480Ω  
D
D
out  
out  
+3.0V  
90%  
10%  
90%  
10%  
255Ω  
30 pF*  
GND  
255Ω  
5 pF*  
GND  
*including scope  
and jig capacitance  
GND  
Figure B: Output load  
Figure C: Output load for t  
, t  
Figure A: Input waveform  
CLZ CHZ  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.  
This parameter is sampled and not 100% tested.  
For test conditions, see AC Test Conditions, Figures A, B, C.  
tCLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.  
This parameter is guaranteed but not tested.  
WE is HIGH for read cycle.  
CE1 and OE are LOW and CE2 is HIGH for read cycle.  
Address valid prior to or coincident with CE transition LOW.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CE1 or WE must be HIGH or CE2 LOW during address transitions.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 CE1 and CE2 have identical timing.  
6