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AS7C1024A-15STC 参数 Datasheet PDF下载

AS7C1024A-15STC图片预览
型号: AS7C1024A-15STC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V / 3.3V 128KX8 CMOS SRAM (进化引脚) [5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 116 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C1024A  
AS7C31024A  
®
AC test conditions  
– Output load: see Figure B or Figure C.  
– Input pulse level: GND to 3.0V. See Figure A.  
– Input rise and fall times: 2 ns. See Figure A.  
– Input and output timing reference levels: 1.5V.  
Thevenin equivalent:  
168  
D
+1.728V (5V and 3.3V)  
OUT  
+5V  
480  
+3.3V  
320  
D
D
OUT  
OUT  
+3.0V  
90%  
10%  
90%  
10%  
255  
C(14)  
GND  
255  
C(14)  
GND  
2 ns  
Figure A: Input pulse  
GND  
Figure B: 5V Output load  
Figure C: 3.3V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CE1 is required to meet I specification.  
CC CC SB  
This parameter is sampled and not 100% tested.  
For test conditions, see AC Test Conditions, Figures A, B, and C.  
t
and t are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.  
CHZ  
CLZ  
This parameter is guaranteed, but not 100% tested.  
WEis High for read cycle.  
CE1 and OE are Low and CE2 is High for read cycle.  
Address valid prior to or coincident with CE1 transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 CE1 and CE2 have identical timing.  
13 C=30pF, except all high Z and low Z parameters, C=5pF.  
14 2V data retention applies to commercial temperature operating range only.  
9/ 26/ 02; 0.9.9  
Alliance Semiconductor  
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