Advance Information
June 2001
®
AS6YB1M8
1.65V to 2.2V 1M × 8 Intelliwatt™ Super Low-Power CMOS SRAM
Features
•
•
•
•
•
•
•
AS6YB1M8
Intelliwatt™ active power circuitry
Industrial temperature range (-40
o
- +85
o
C)
Organization:
1,048,576 words x 8 bits
1.65V to 2.2V power supply range
Fast access time of 55ns
Low power consumption: ACTIVE
- 33 mW max at 2.2 V and 55 ns
• Low power consumption: STANDBY
- 33
µ
W max at 2.2V
• 1.0V data retention
• Equal access and cycle times
• Easy memory expansion with CS1, CS2, OE inputs
• Smallest footprint package
- 48-ball FBGA; 7.0 x 9.0 mm
• ESD protection
≥
2000 volts
• Latch-up current
≥
200 mA
Logic block diagram
Row Decoder
V
DD
1024 × 8
Array
(8,388,608)
V
SS
BBBBBBBBPin
arrangement (top view)
48-CSP Ball-Grid-Array Package
A0~A9
I/O1–I/O8
WE
I/O
buffer
Control circuit
Column decoder
A
B
C
D
E
F
G
H
1
DNU
DNU
I/O1
V
SS
V
CC
I/O4
DNU
A18
2
OE
DNU
DNU
I/O2
I/O3
DNU
DNU
A8
3
A0
A3
A5
A17
V
CC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CS1
DNU
I/O6
I/O7
DNU
WE
A11
6
CS2
DNU
I/O5
V
CC
V
SS
I/O8
DNU
A19
UB
OE
LB
CS1
CS2
A10~A19
Note: DNU = Do Not Use
Selection guide
V
CC
Range
Product
AS6YB1M8
Min
(V)
1.65
Typ
(V)
1.8 - 2.0
Max
(V)
2.2
Speed
(ns)
55/70
Power Dissipation
Operating (I
CC1
)
Max (mA)
2
Standby (I
SB1
)
Max (
µ
A)
15
6/14/01; V.0.9.1
Alliance Semiconductor
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ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
