September 2001
®
AS6WA5128
3.0V to 3.6V 512K × 8 Intelliwatt™ low-power CMOS SRAM
Features
• AS6WA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 3.0V to 3.6V at 55 ns
• Low power consumption: ACTIVE
- 144 mW at 3.6V and 55 ns
• 1.5V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
• ESD protection
≥
2000 volts
• Latch-up current
≥
200 mA
- 36(48)-ball FBGA
• Low power consumption: STANDBY
- 72 µW max at 3.6V
Logic block diagram
V
CC
GND
Input buffer
36(48)-CSP/BGA Package
(shading indicates no ball)
1
A
A
0
I/O
5
I/O
6
V
SS
V
CC
I/O
7
I/O
8
A
9
B
C
D
I/O1
2
A
1
A
2
3
NC
WE
NC
4
A
3
A
4
A
5
5
A
6
A
7
6
A
8
I/O
1
I/O
2
V
CC
V
SS
A0
A1
A2
A3
A4
A5
A6
A7
A8
Row decoder
Sense amp
512K
×
8
Array
(4,194,304)
I/O8
E
F
G
H
Column decoder
A9
A10
A11
A12
A13
A14
A15
A16
Control
circuit
WE
OE
CS
A
18
OE
A
10
CS
A
11
A
17
A
16
A
12
A
15
A
13
I/O
3
I/O
4
A
14
Selection guide
V
CC
Range
Product
AS6WA5128
Min
(V)
3.0
Typ
2
(V)
3.3
Max
(V)
3.6
Speed
(ns)
55
Power Dissipation
Standby (I
SB1
)
Operating (I
CC
)
Max (mA)
Max (
µ
A)
2
20
9/21/01; v.1.2
Alliance Semiconductor
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