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AS6VA25616-TC 参数 Datasheet PDF下载

AS6VA25616-TC图片预览
型号: AS6VA25616-TC
PDF下载: 下载PDF文件 查看货源
内容描述: 2.7V至3.3V 256K ×16 Intelliwatt低功耗CMOS SRAM有一个芯片使能 [2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 175 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS6VA25616  
®
Recommended operating condition (over the operating range)  
Parameter  
Description  
Test Conditions  
Min  
2.4  
Max  
0.4  
Unit  
V
V
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
Input Load Current  
Output Load Current  
I
= –2.1mA  
= 2.1mA  
OL  
V
V
V
V
= 2.7V  
= 2.7V  
= 2.7V  
= 2.7V  
OH  
OH  
CC  
CC  
CC  
CC  
V
I
V
OL  
V
V
2.2  
–0.5  
–1  
V
+ 0.5  
CC  
V
IH  
IL  
0.8  
+1  
+1  
V
I
GND < V < V  
CC  
µA  
µA  
IX  
IN  
I
I
GND < V < V Outputs High Z  
CC;  
–1  
OZ  
CC  
O
CS = V , V = V  
IL IN  
IL  
V
Operating Supply  
Current  
CC  
or V , I  
= 0mA,  
V
V
= 3.3V  
= 3.3V  
2
5
mA  
mA  
mA  
µA  
IH OUT  
CC  
CC  
f = 0  
CS < 0.2V, V < 0.2V  
or V > V – 0.2V,  
IN  
I
@
Average V Operating  
CC  
CC1  
IN  
CC  
1 MHz Supply Current at 1 MHz  
f = 1 mS  
Average V Operating CS V , V = V or  
CC  
IL  
IN  
IL  
I
V
= 3.3V (55 ns)  
CC  
40  
100  
20  
2
CC2  
Supply Current  
V
, f = f  
IH  
Max  
CS > V or UB = LB  
IH  
CS Power Down Current;  
TTL Inputs  
I
> V , other inputs =  
V
= 3.3V  
= 3.3V  
= 1.2V  
SB  
IH  
CC  
CC  
CC  
V
or V , f = 0  
IL  
IH  
CS > V – 0.2V or  
CC  
CS Power Down Current; UB = LB > V – 0.2V,  
CC  
I
V
V
µA  
SB1  
CMOS Inputs  
other inputs = 0V –  
, f = f  
V
CC  
Max  
CS > V – 0.1V,  
UB = LB = V – 0.1V  
CC  
I
Data Retention  
µA  
SBDR  
CC  
f = 0  
Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)2  
a
CC  
Parameter  
Symbol  
Signals  
Test conditions  
Max  
Unit  
pF  
Input capacitance  
C
A, CS, WE, OE, LB, UB  
I/O  
V
= 0V  
5
7
IN  
IN  
I/O capacitance  
C
V
= V = 0V  
OUT  
pF  
I/O  
IN  
10/6/00  
ALLIANCE SEMICONDUCTOR  
3