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AS6VA25616-55TC 参数 Datasheet PDF下载

AS6VA25616-55TC图片预览
型号: AS6VA25616-55TC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 9 页 / 140 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS6VA25616  
®
Write cycle (over the operating range)11  
Parameter  
Symbol  
tWC  
tCW  
tAW  
tAS  
Min  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
12  
Write cycle time  
55  
40  
40  
0
Chip select to write end  
Address setup to write end  
Address setup time  
12  
Write pulse width  
tWP  
tAH  
tDW  
tDH  
35  
0
Address hold from end of write  
Data valid to write end  
25  
0
Data hold time  
4, 5  
4, 5  
4, 5  
Write enable to output in high Z  
Output active from write end  
UB/LB low to end of write  
Shaded areas indicate preliminary information.  
tWZ  
tOW  
tBW  
0
20  
5
35  
Write waveform 1 (WE controlled)10,11  
t
t
WC  
Address  
t
AH  
CW  
CS  
t
BW  
LB, UB  
t
AW  
t
t
AS  
WP  
WE  
t
t
DH  
DW  
Data valid  
D
IN  
t
WZ  
t
OW  
D
Data undefined  
OUT  
High Z  
Write waveform 2 (CS controlled)10,11  
t
WC  
Address  
t
t
AS  
AH  
t
CW  
CS  
t
AW  
t
BW  
LB, UB  
WE  
t
WP  
t
t
DH  
DW  
Data valid  
High Z  
D
IN  
t
t
CLZ  
WZ  
t
OW  
D
Data undefined  
OUT  
High Z  
5/25/01; v.1.2  
Alliance Semiconductor  
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