AS6UA25616
®
Data retention characteristics (over the operating range)13,5
Parameter
Symbol
Test conditions
Min
1.5V
–
Max
Unit
V
VCC for data retention
VDR
VCC = 1.5V
CS ≥ VCC – 0.1V or
UB = LB = > VCC – 0.1V
VIN ≥ VCC – 0.1V or
VIN ≤ 0.1V
-
Data retention current
ICCDR
tCDR
tR
8
–
–
µA
ns
Chip deselect to data retention time
Operation recovery time
0
tRC
ns
Data retention waveform
Data retention mode
V
V
V
CC
V
≥ 1.5V
CC
CC
DR
t
t
R
CDR
V
DR
V
V
IH
CS
IH
AC test loads and waveforms
Thevenin equivalent:
R1
R1
V
R
CC
V
TH
CC
VTH
OUTPUT
OUTPUT
OUTPUT
30 pF
5 pF
ALL INPUT PULSES
V
Typ
R2
CC
R2
90%
10%
90%
10%
INCLUDING
JIG AND
INCLUDING
JIG AND
SCOPE
< 5 ns
(c)
GND
(a)
SCOPE
(b)
Parameters
VCC = 2.7V
1095
VCC = 2.3V
Unit
R1
3800
4000
1600
1.2V
Ohms
Ohms
Ohms
Volts
R2
1600
RTH
555
VTH
1.6
Notes
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CS is required to meet I specification.
CC CC SB
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions.
t
and t
are specified with C = 5pF as in Figure C. Transition is measured 500 mV from steady-state voltage.
CHZ L
CLZ
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CS and OE are LOW for read cycle.
Address valid prior to or coincident with CS transition LOW.
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 1.5V data retention applies to commercial and industrial temperature range operations.
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
5/25/01; v.1.2
Alliance Semiconductor
P. 6 of 9
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
