AS6UA25616
Recommended operating condition (over the operating range)
Parameter
V
OH
Description
I
OH
= –2.1mA
Output HIGH Voltage
I
OH
= –0.5mA
I
OH
= –0.1mA
I
OL
= 2.1mA
V
OL
Output LOW Voltage
I
OL
= 0.5mA
I
OL
= 0.1mA
V
IH
Input HIGH Voltage
Test Conditions
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
CC
= 2.7V
V
IL
I
IX
I
OZ
I
CC
Input LOW Voltage
Input Load Current
Output Load Current
V
CC
Operating Supply
Current
V
CC
= 2.3V
V
CC
= 1.65V
GND < V
IN
< V
CC
GND < V
O
< V
CC;
Outputs High Z
CS = V
IL
, V
IN
= V
IL
or V
IH
, I
OUT
= 0mA,
f=0
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
2.2
2.0
1.4
–0.5
–0.3
–0.3
–1
–1
Min
2.4
2.0
1.5
0.4
0.4
0.2
V
CC
+ 0.5
V
CC
+ 0.3
V
CC
+ 0.3
0.8
0.6
0.4
+1
+1
2
1
1
4
2
2
40/30/20
30/25/15
25/10/12
100
100
100
20
15
12
2
µ
A
µ
A
µ
A
µ
A
µ
A
Max
Unit
V
V
V
V
mA
I
CC1
@
1 MHz
,
CS < 0.2V V
IN
< 0.2V
Average V
CC
Operating
or V
IN
> V
CC
– 0.2V,
Supply Current at 1 MHz
f = 1 mS
Average V
CC
Operating
Supply Current
mA
I
CC2
V
CC
= 3.6V (55/70/100 mS)
CS
≠
V
IL
, V
IN
= V
IL
or
V
CC
= 2.7V (55/70/100 mS)
V
IH
, f = f
Max
V
CC
= 2.3V(55/70/100 mS)
CS > V
IH
or UB = LB
> V
IH
, other inputs =
V
IL
or V
IH
, f = 0
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.2V
mA
I
SB
CS Power Down Current;
TTL Inputs
I
SB1
CS > V
CC
– 0.2V or
CS Power Down Current; UB = LB > V
CC
– 0.2V,
CMOS Inputs
other inputs = 0V –
V
CC
, f = f
Max
Data Retention
CS > V
CC
– 0.1V,
UB = LB = V
CC
– 0.1V
f=0
I
SBDR
Capacitance (f = 1 MHz, T
a
= Room temperature, V
CC
= NOMINAL)
Parameter
Input capacitance
I/O capacitance
Symbol
C
IN
C
I/O
Signals
A, CS, WE, OE, LB, UB
I/O
Test conditions
V
IN
= 0V
V
IN
= V
OUT
= 0V
Max
5
7
Unit
pF
pF
6/19/00
ALLIANCE SEMICONDUCTOR
3
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
