AS6UA25616
Recommended operating condition (over the operating range)
Parameter
Description
Test Conditions
Min
2.4
2.0
1.5
Max
Unit
V
IOH = –2.1mA
OH = –0.5mA
OH = –0.1mA
IOL = 2.1mA
OL = 0.5mA
OL = 0.1mA
VCC = 2.7V
V
Output HIGH Voltage
I
VCC = 2.3V
VCC = 1.65V
VCC = 2.7V
VCC = 2.3V
VCC = 1.65V
VCC = 2.7V
OH
I
0.4
V
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
I
0.4
V
V
V
OL
I
0.2
2.2
2.0
VCC + 0.5
V
V
CC = 2.3V
CC = 1.65V
VCC = 2.7V
CC = 2.3V
CC = 1.65V
GND < VIN < VCC
VCC + 0.3
IH
V
1.4
VCC + 0.3
–0.5
–0.3
–0.3
–1
0.8
V
V
0.6
IL
V
0.4
IIX
Input Load Current
Output Load Current
+1
µA
µA
IOZ
GND < V < VCC; Outputs High Z
–1
+1
O
VCC = 3.6V
2
CS = V , VIN = V
IL
IL
VCC Operating Supply
Current
ICC
or V , IOUT = 0mA,
V
CC = 2.7V
CC = 2.3V
VCC = 3.6V
CC = 2.7V
CC = 2.3V
VCC = 3.6V (55/ 70/ 100 mS)
1
mA
mA
mA
µA
IH
f = 0
V
1
4
CS < 0.2V, V < 0.2V
IN
ICC1
@
Average VCC Operating
Supply Current at 1 MHz
or VIN > VCC – 0.2V,
f = 1 mS
V
2
2
1 MHz
V
40/ 30/ 20
30/ 25/ 15
25/ 10/ 12
100
Average VCC Operating CS ≠ V , V = V or
IL IN
IL
ICC2
V
CC = 2.7V (55/ 70/ 100 mS)
Supply Current
V , f = fMax
IH
V
CC = 2.3V(55/ 70/ 100 mS)
VCC = 3.6V
VCC = 2.7V
CS > VIH or UB = LB
> V , other inputs =
CS Power Down Current;
TTL Inputs
ISB
100
IH
V or V , f = 0
IL
IH
V
CC = 2.3V
VCC = 3.6V
CC = 2.7V
CC = 2.3V
100
CS > VCC – 0.2V or
CS Power Down Current; UB = LB > VCC – 0.2V,
20
V
15
ISB1
µA
µA
CMOS Inputs
other inputs = 0V –
VCC, f = fMax
V
12
CS > VCC – 0.1V,
UB = LB = VCC – 0.1V
f = 0
ISBDR
Data Retention
VCC = 1.2V
2
Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)
a
CC
Signals
Parameter
Symbol
Test conditions
IN = 0V
IN = VOUT = 0V
Max
5
Unit
pF
Input capacitance
C
A, CS
,
WE
,
OE, LB, UB
V
IN
I/ O capacitance
C
I/ O
V
7
pF
I/ O
6/ 19/ 00
ALLIANCE SEMICONDUCTOR
3