OCTOBER 2007
January 2007
AS6C4008
512K X 8
CMOS SRAM
512K X 8 BIT LOW POWER
BIT LOW POWER CMOS SRAM
FEATURES
Access time : 55 ns
Low power consumption:
Operatingcurrent : 30/20mA (TYP.)
Standby current : 4 µA (TYP.) C-version
Single 2.7V ~ 5.5V power supply
Fully Compatible with all Competitors 5V product
Fully Compatible with all Competitors 3.3V product
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
All products ROHS Compliant
Package 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
:
32-pin
600 mil P-DIP
:
32-pin 8mm x 13.4mm sTSOP
Coming
*36-ball
6mm x 8mm TFBGA
Soon!
*
GENERAL DESCRIPTION
The AS6C4008 is a 4,194,304-bit low power
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C4008 is well designed for very low power
system applications, and particularly well suited for
battery back-up non-volatile memory application.
T he AS6C4008 operates from a single power
supply of 2.7V ~ 5.5V
.
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION**
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
A0 - A18
DQ0 – DQ7
CE#
WE#
OE#
V
CC
V
SS
NC
Vcc
Vss
A0-A18
DECODER
512Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
10/OCTOBER/07, V.1.1
Alliance Memory Inc.
Page 1 of 1
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
