AS6C1616-55TINL
16M Bits LOW POWER CMOS SRAM
Rev. 1.0
The AS6C1616 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits. It is fabricated using
very high performance, high reliability CMOS
technology. Its standby current is stable within the
range of operating temperature.
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 45mA (TYP.)
Standby current : 4A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
The AS6C1616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
Tri-state output
Data byte control :
The AS6C1616 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
LB# controlled DQ0 ~ DQ7
UB# controlled DQ8 ~ DQ15
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 48-pin 12mm x 20mm TSOP-I
GENERAL DESCRIPTION
PRODUCT FAMILY
Operating
Temperatur Vcc Range
Power Dissipation
Product
Family
Speed
Standby(ISB1,TYP.) Operating(Icc,TYP.)
e
-40 ~ 85℃
AS6C1616(I)
2.7 ~ 3.6V
55ns
4µA(SL)
45mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
A0 - A19
A-1 - A19
DESCRIPTION
Address Inputs(word mode)
Address Inputs(byte mode)
DQ0 – DQ15 Data Inputs/Outputs
CE#, CE2
WE#
OE#
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
LB#
UB#
VCC
VSS
Ground
Alliance Memory, Inc.
1
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
