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AS4LC4M4F1-60TI 参数 Datasheet PDF下载

AS4LC4M4F1-60TI图片预览
型号: AS4LC4M4F1-60TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4M × 4 CMOS DRAM(快速页面), 3.3V系列 [4M×4 CMOS DRAM (Fast Page) 3.3V Family]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 14 页 / 269 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC4M4F1
®
Fast page mode cycle
-50
Symbol
t
CPA
t
RASP
t
PC
t
CP
t
PCM
t
CRW
Parameter
Access time from
CAS
precharge
RAS
pulse width
-60
Max
28
100K
Min
60
35
10
85
15
Max
35
100K
Unit
Notes
13
Min
50
30
10
80
12
Read-write cycle time
CAS
precharge time (fast page)
Fast page mode RMW cycle
Page mode
CAS
pulse width (RMW)
Output enable
-50
Symbol
t
CLZ
t
ROH
t
OEA
t
OED
t
OEZ
t
OEH
t
OLZ
t
OFF
Parameter
CAS to output in Low Z
RAS hold time referenced to OE
OE access time
OE to data delay
Output buffer turnoff delay from OE
OE command hold time
OE to output in Low Z
Output buffer turn-off time
Min
0
8
13
0
10
0
0
Max
13
13
13
Min
0
10
15
0
10
0
0
-60
Max
15
15
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
8,10
8
Notes
8
Self-refresh cycle
-50
Std Symbol
Parameter
t
RASS
RAS
pulse width (CBR self refresh)
RAS
precharge time (CBR self refresh)
t
RPS
t
CHS
CAS
hold time (CBR self refresh)
Min
100
90
8
Max
-
-
-
Min
100
105
10
-60
Max
-
-
-
Unit
µs
ns
nx
Notes
15
5/16/01; v.1.0 Restored
Alliance Semiconductor
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