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AS4LC256K16EO-35 参数 Datasheet PDF下载

AS4LC256K16EO-35图片预览
型号: AS4LC256K16EO-35
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 256K ×16的CMOS DRAM( EDO ) [3.3V 256K X 16 CMOS DRAM (EDO)]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 526 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC256K16EO  
®
Notes  
1
2
3
I
I
, I , I , and I  
depend on cycle rate.  
CC6  
CC1 CC3 CC4  
and I  
depend on output loading. Specified values are obtained with the output open.  
CC4  
CC1  
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal  
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after  
extended periods of bias without clocks (greater than 8 ms).  
4
AC Characteristics assume t = 5 ns. All AC parameters are measured with a load equivalent to two TTL loads and 60 pF, V (min) GND and V (max)  
T
IL  
IH  
V  
.
CC  
5
6
V
(min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between V and V .  
I
H
I
L
I
H
I
L
Operation within the t  
specified t  
(max) limit insures that t  
(max) limit, then access time is controlled exclusively by t  
(max) can be met. t  
(max) is specified as a reference point only. If t  
(max) is specified as a reference point only. If t  
is greater than the  
is greater than the  
RCD  
RAC  
RCD  
.
RCD  
RCD  
CAC  
7
Operation within the t  
(max) limit insures that t  
(max) can be met. t  
RAC RAD  
RAD  
RAD  
specified t  
(max) limit, then access time is controlled exclusively by t .  
AA  
RAD  
8
Assumes three state test load (5 pF and a 380 Thevenin equivalent).  
Either t or t must be satisfied for a read cycle.  
9
RCH  
RRH  
10  
11  
t
(max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels.  
OFF  
t
, t  
, t  
, t  
and t  
are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWS t  
AWD WS  
WCS WCH RWD CWD  
(min) and t t (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the cycle. If t  
t  
WH  
WH  
RWD  
(min), tCWD t  
(min) and tAWD t (min), the cycle is a read-write cycle and the data out will contain data read from the selected cell.  
RWD  
CWD  
AWD  
If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.  
12 These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.  
13 Access time is determined by the longest of t or t or t  
.
CAP  
CAA  
CAC  
14  
t
ASC t to achieve t (min) and t  
(max) values.  
CAP  
CP  
PC  
15 These parameters are sampled and not 100% tested.  
Key to switching waveform  
Undefined/don’t care  
Rising input  
Falling input  
Read cycle waveform  
tRC  
tRAS  
tRCD  
tRSH  
tRP  
RAS  
tCSH  
tASC  
tRCS  
tCAH  
tCRP  
tCAS  
UCAS  
,
tAR  
LCAS  
tRAD  
tRAL  
tASR  
tRAH  
Row Address  
Address  
Col Address  
tRRH  
tRCH  
WE  
OE  
tROH  
tOEZ  
tRAC  
tAA  
tOFF  
tOEA  
tCAC  
tCLZ  
Data Out  
I/O  
4/11/01; V.1.1  
Alliance Semiconductor  
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