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AS4LC2M8S0 参数 Datasheet PDF下载

AS4LC2M8S0图片预览
型号: AS4LC2M8S0
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 2M × 8 / 1M × 16的CMOS同步DRAM [3.3V 2M × 8/1M × 16 CMOS synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 720 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC2M8S1
AS4LC1M16S1
®
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Output voltage
Ambient operating temperature
Symbol
V
CC
,V
CCQ
GND
V
IH
V
IL
V
OH
V
OL
T
A
Min
3.0
0.0
2.0
–0.3
2.4
0
Nominal
3.3
0.0
Max
3.6
0.0
V
CC
+ 0.3
0.8
0.4
70
Unit
V
V
V
V
V
V
°C
Notes
8
8
V
IL
Min = –1.5V for pulse widths less than 5 ns.
I
OH
= –2mA, and I
OL
= 2mA.
Recommended operating conditions apply throughout this document unless otherwise specified.
Absolute maximum ratings
Parameter
Input voltage
Power supply voltage
Storage temperature (plastic)
Power dissipation
Short circuit output current
Symbol
V
IN
,V
OUT
V
CC
,V
CCQ
T
STG
P
D
I
OUT
Min
–1.0
–1.0
–55
Max
+4.6
+4.6
+150
1
50
Unit
V
V
°C
W
mA
Notes
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
5/21/01; v.1.1
Alliance Semiconductor
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