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AS4LC4M4E0-60JI 参数 Datasheet PDF下载

AS4LC4M4E0-60JI图片预览
型号: AS4LC4M4E0-60JI
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 15 页 / 259 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC4M4E0  
AS4LC4M4E1  
®
Hyper page mode cycle  
-50  
-60  
Symbol  
tCPWD  
tCPA  
Parameter  
Min  
45  
Max  
Min  
52  
Max  
Unit  
ns  
Notes  
CAS precharge to WE delay time  
Access time from CAS precharge  
RAS pulse width  
28  
100K  
35  
100K  
ns  
13  
tRASP  
tDOH  
tREZ  
50  
5
60  
5
ns  
Previous data hold time from CAS  
Output buffer turn off delay from RAS  
Output buffer turn off delay from WE  
Output buffer turn off delay from OE  
Hyper page mode cycle time  
Hyper page mode RMW cycle  
RAS hold time from CAS  
ns  
0
13  
13  
13  
0
15  
15  
15  
ns  
tWEZ  
0
0
ns  
tOEZ  
0
0
ns  
tHPC  
20  
47  
30  
25  
56  
35  
ns  
tHPRWC  
tRHCP  
ns  
ns  
Output enable  
-50  
-60  
Symbol  
tCLZ  
Parameter  
Min  
0
Max  
Min  
0
Max  
Unit  
ns  
Notes  
CAS to output in Low Z  
RAS hold time referenced to OE  
OE access time  
8
tROH  
tOEA  
tOED  
tOEZ  
tOEH  
tOLZ  
8
10  
ns  
13  
15  
ns  
OE to data delay  
13  
0
15  
0
ns  
Output buffer turnoff delay from OE  
OE command hold time  
OE to output in Low Z  
Output buffer turn-off time  
13  
15  
ns  
8
10  
0
10  
0
ns  
ns  
tOFF  
0
13  
0
15  
ns  
8,10  
Self-refresh cycle  
-50  
-60  
Std  
Symbol  
Parameter  
Min  
Max  
Min  
Max  
Unit  
Notes  
RAS pulse width  
(CBR self refresh)  
tRASS  
100  
100  
µs  
ns  
ns  
RAS precharge time  
(CBR self refresh)  
tRPS  
90  
8
105  
10  
CAS hold time  
(CBR self refresh)  
tCHS  
4/11/01; V.1.1  
Alliance Semiconductor  
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