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AS4LC2M8S1-10TC 参数 Datasheet PDF下载

AS4LC2M8S1-10TC图片预览
型号: AS4LC2M8S1-10TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 2M ×8 / 1M ×16的CMOS同步DRAM [3.3V 2M x 8/1M x 16 CMOS synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 28 页 / 692 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC2M8S1  
AS4LC1M16S1  
–7  
–8  
–10  
CAS  
Sym  
Parameter  
latency Min  
Max  
Min  
2
Max  
Min  
2
Max  
Unit  
tCK  
Notes  
5
Load mode register to  
active/ refresh command  
tMRD  
2
3
2
1
2
2
2
2.5  
2.5  
2.5  
3
3
3
ns  
ns  
ns  
6
6
6
Output data hold time @  
30 pF  
tOH  
CKE to CLOCK enable or  
power-down exit mode  
tPED  
1
1
1
tCK  
Active to precharge  
command  
tRAS  
42 120,000  
48  
120,000  
50  
120,000 ns  
tRC Active command period  
tRCAR Auto refresh period  
70  
70  
80  
80  
80  
80  
ns  
ns  
8
8
Active to read or write  
delay  
tRCD  
20  
24  
30  
ns  
Refresh period—2048  
rows  
tREF  
64  
64  
64  
ms  
3
2
1
3
2
1
3
2
1
3
2
1
tCK  
tCK  
tCK  
9
9
9
Data-out high Z from  
tROH precharge/ burst stop  
command  
Precharge command  
period  
tRP  
21  
14  
24  
16  
30  
20  
ns  
ns  
8
Active Bank A to Active  
tRRD  
Bank B command  
tT Transition time  
0.3  
2
1.0  
0.3  
2
1.0  
0.3  
2
1.0  
ns  
tWR WRITE recovery time  
tCK  
Exit SELF REFRESH to  
tXSR  
70  
80  
80  
ns  
20  
ACTIVE command  
Notes  
1
2
3
4
5
6
7
8
I
is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open.  
DD  
Other input signals are allowed to transition no more than once in any two-clock period and are otherwise at valid V or V levels.  
IH IL  
Address transitions average one transition every two-clock period.  
The I current will decrease as the CAS-latency is reduced. This is due to the fact that the maximum cycle rate is slower as the CAS-l atency is reduced.  
DD  
= 7 ns for –7, 8 ns for –8, and 10 ns for –10.  
t
CK  
If clock t > 1 ns, (t – 0.5)ns should be added to the parameter.  
r
r/ 2  
If clock (t and t ) > 1 ns, [(t + t )/ 2 – 1] ns should be added to the parameter.  
r
f
r
f
V
overshoot: V  
= V  
+ 2V for a pulse width 3 ns, and the pulse width cannot be greater than one third of the cycle rate. V undershoot:  
IH  
IH(max)  
DDQ  
IL  
V
= –2V for a pulse width 3 ns and the pulse width cannot be greater than one third of the cycle rate.  
IL(min)  
Required clocks are specified by JEDEC functionalisty and are not dependent on any timing parameter.  
9
10 The clock frequency must remain constant during access or precharge states (READ, WRITE, including t  
used to reduce the data rate.  
and PRECHARGE commands). CKE may be  
WR  
11 Timing actually specified t plus t ; clock(s) specified as a reference only at minimum cycle rate.  
WR RP  
12 Timing actually specified by t  
.
WR  
13  
t
defines the time at which the output achieves the open circuit condition; it is not a reference to V or V . The last valid data element will meet t  
OH OL OH  
HZ  
before going to HIGH-Z.  
14 CLK must be toggled a minimum of two times during this period.  
15 Enables on-chip refresh and address counters.  
16 All voltages referenced to V .  
SS  
17 The minimum specifications are used only to indicate the cycle time at which proper operation over the full temperature range (0 ° C T 70° C) is  
A
endured.  
7/ 5/ 00  
ALLIANCE SEMICONDUCTOR  
9