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AS4LC2M8S0-10 参数 Datasheet PDF下载

AS4LC2M8S0-10图片预览
型号: AS4LC2M8S0-10
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM]
分类和应用: 动态存储器
文件页数/大小: 26 页 / 576 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Parameter
Supply voltage
Input voltage
Output voltage
Ambient operating temperature
Symbol
V
CC
,V
CCQ
GND
V
IH
V
IL
V
OH
V
OL
T
A
Min
3.0
0.0
2.0
–0.3
2.4
0
Nominal
3.3
0.0
Max
3.6
0.0
V
CC
+ 0.3
0.8
0.4
70
Unit
V
V
V
V
V
V
°C
V
IL
min = -1.5V for pulse widths less than 5 ns.
I
OH
= -2mA, and I
OL
= 2mA
Recommended operating conditions apply throughout this document unless otherwise specified.
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Parameter
Input voltage
Power supply voltage
Storage temperature (plastic)
Power dissipation
Short circuit output current
Symbol
V
in
,V
out
V
CC
,V
CCQ
T
STG
P
D
I
out
Min
-1.0
-1.0
-55
Max
+4.6
+4.6
+150
1
50
Unit
V
V
°C
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'5$0
'5$0
'5$0
W
mA
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is notimplied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
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