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AS4CM4EOQ 参数 Datasheet PDF下载

AS4CM4EOQ图片预览
型号: AS4CM4EOQ
PDF下载: 下载PDF文件 查看货源
内容描述: 4M X 4 CMOS四路CAS DRAM ( EDO )系列 [4M X 4 CMOS Quad CAS DRAM (EDO) family]
分类和应用: 动态存储器
文件页数/大小: 16 页 / 354 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C4M4EOQ  
AS4C4M4E1Q  
®
Logic block diagram for 4K refresh  
Data  
I/O  
buffers  
VCC  
Column decoder  
Sense amp  
GND  
I/O0 to I/O3  
RAS clock  
generator  
RAS  
CAS  
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
OE  
4,194,304 × 4  
Array  
CAS clock  
generator  
(16,777,216)  
A9  
A10  
A11  
WE clock  
generator  
WE  
Logic block diagram for 2K refresh  
Data  
I/O  
buffers  
VCC  
Column decoder  
Sense amp  
GND  
I/O0 to I/O3  
RAS clock  
generator  
RAS  
CAS  
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
OE  
4,194,304 × 4  
Array  
CAS clock  
generator  
(16,777,216)  
A9  
A10  
Substrate bias  
generator  
WE clock  
generator  
WE  
Recommended operating conditions  
Parameter  
Symbol  
VCC  
Min  
Nominal  
Max  
5.5  
Unit  
V
4C4M4EOQ  
AS4C4M4E1Q  
4.5  
0.0  
2.4  
5.0  
0.0  
Supply voltage  
GND  
VIH  
0.0  
V
4C4M4EOQ  
AS4C4M4E1Q  
VCC  
V
Input voltage  
VIL  
TA  
–0.5†  
0
0.8  
70  
V
Ambient operating temperature  
°C  
V
min -3.0V for pulse widths less than 5 ns. Recommended operating conditions apply throughout this document unlesss otherwise specified.  
IL  
3/22/01; v.1.0  
Alliance Semiconductor  
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