AS4C4M4EOQ
AS4C4M4E1Q
®
DC electrical characteristics (AS4LC4M4E0/E1)
-50
Parameter
Input leakag
e c
urrent
Symbol Test conditions
I
IL
0V
≤
V
in
≤
V
CC
(max)
Pins not under test = 0V
D
OUT
disabled, 0V
≤
V
out
≤
V
CC
(max)
RAS, UCAS, LCAS, Address cycling;
t
RC
=min
RAS = UCAS = LCAS
≥
V
IH
,
all other inputs at V
IH
or V
IL
RAS cycling, UCAS = LCAS
≥
V
IH
,
t
RC
= min of RAS low after XCAS low.
RAS = V
IL
, UCAS or LCAS,
address cycling: t
HPC
= min
RAS = UCAS = LCAS = V
CC
- 0.2V,
F=0
I
OUT
= -2.0 mA
I
OUT
= 2 mA
RAS, UCAS or LCAS cycling, t
RC
=
min
RAS = UCAS = LCAS
≤
0.2V,
WE = OE = V
CC
- 0.2V,
all other inputs at 0.2V or V
CC
-
0.2V
Min
-5
-5
–
–
Max
+5
+5
85
2.0
Min
-5
-5
–
–
-60
Max
+5
+5
75
2.0
Unit
µ
A
µ
A
Notes
Output leakage current I
OL
Operating power
supply current
TTL standby power
supply current
Average power supply
current, RAS refresh
mode or CBR
EDO page mode
average power supply
current
CMOS standby power
supply current
Output voltage
I
CC1
I
CC2
I
CC3
mA
mA
4,5
–
80
–
70
mA
4
I
CC4
I
CC5
V
OH
V
OL
–
85
–
75
mA
4, 5
–
2.4
–
–
200
–
0.4
80
–
2.4
–
–
200
–
0.4
70
µA
V
V
mA
CAS before RAS refresh
I
CC6
current
Self refresh current
I
CC7
–
0.3
–
0.3
mA
3/22/01; v.1.0
Alliance Semiconductor
P. 5 of 16
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
