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AS4C8M16SA-6TAN 参数 Datasheet PDF下载

AS4C8M16SA-6TAN图片预览
型号: AS4C8M16SA-6TAN
PDF下载: 下载PDF文件 查看货源
内容描述: [128M – (8M x 16 bit) Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 55 页 / 1625 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C8M16SA-Automotive  
128M (8M x 16 bit) Synchronous DRAM (SDRAM)  
Confidential  
Features  
Advanced (Rev. 2.0, Mar. /2015)  
Overview  
Fast access time from clock: 5 ns  
Fast clock rate: 166 MHz  
AEC-Q100 Compliant  
The 128Mb SDRAM is a high-speed CMOS  
synchronous DRAM containing 128 Mbits. It is  
internally configured as 4 Banks of 2M word x 16  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal,  
CLK). Read and write accesses to the SDRAM are  
burst oriented; accesses start at a selected location  
and continue for a programmed number of locations  
in a programmed sequence. Accesses begin with  
the registration of a BankActivate command which  
is then followed by a Read or Write command.  
Fully synchronous operation  
Internal pipelined architecture  
2M word x 16-bit x 4-bank  
Programmable Mode registers  
- CAS Latency: 2, or 3  
- Burst Length: 1, 2, 4, 8, or full page  
- Burst Type: Sequential or Interleaved  
- Burst stop function  
The SDRAM provides for programmable Read  
or Write burst lengths of 1, 2, 4, 8, or full page, with  
a burst termination option. An auto precharge  
function may be enabled to provide a self-timed row  
precharge that is initiated at the end of the burst  
sequence. The refresh functions, either Auto or Self  
Refresh are easy to use.  
Auto Refresh and Self Refresh  
4096 refresh cycles/32ms  
Automotive Temperature: T = -40~105  
A
CKE power down mode  
Single +3.3V 0.3V power supply  
Interface: LVTTL  
54-pin 400 mil plastic TSOP II package  
- Pb free and Halogen free  
54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package  
- Pb free and Halogen free  
By having a programmable mode register, the  
system can choose the most suitable modes to  
maximize its performance. These devices are well  
suited for applications requiring high memory  
bandwidth and particularly well suited to high  
performance PC applications.  
Table 1. Key Specifications  
AS4C8M16SA-Automotive  
-6  
tCK3  
tAC3  
tRAS  
tRC  
Clock Cycle time(min.)  
Access time from CLK (max.)  
Row Active time(min.)  
Row Cycle time(min.)  
6
5
ns  
ns  
42 ns  
60 ns  
Table 2.Ordering Information  
Part Number  
Frequency Package  
Temperature Temp Range  
AS4C8M16SA-6BAN  
AS4C8M16SA-6TAN  
166MHz  
166MHz  
54-Ball FBGA Automotive  
54-Pin TSOPII Automotive  
-40~105  
-40~105  
B: indicates FBGA package T: indicates TSOP II package  
A: Automotive  
N: indicates Pb and Halogen Free  
Confidential  
1
Rev. 2.0  
Mar. /2015