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AS4C8M16SA-6BAN 参数 Datasheet PDF下载

AS4C8M16SA-6BAN图片预览
型号: AS4C8M16SA-6BAN
PDF下载: 下载PDF文件 查看货源
内容描述: [128M – (8M x 16 bit) Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 55 页 / 1625 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C8M16SA-Automotive  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
NOP  
NOP  
READ A  
NOP  
NOP  
WRITE B  
DIN B0  
NOP  
NOP  
NOP  
COMMAND  
CAS# Latency=2  
tCK2, DQ  
DIN B1  
DIN B2  
DIN B3  
Must be Hi-Z before  
the Write Command  
Don’t Care  
Figure 7. Read to Write Interval  
(Burst Length 4, CAS# Latency = 2)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
NOP  
READ A  
NOP  
NOP  
NOP  
NOP  
WRITE B  
DIN B0  
NOP  
NOP  
COMMAND  
CAS# Latency=3  
tCK3, DQ  
DOUT A0  
DIN B1  
DIN B2  
Must be Hi-Z before  
the Write Command  
Don’t Care  
Figure 8. Read to Write Interval  
(Burst Length  
4, CAS# Latency = 3)  
A read burst without the auto precharge function may be interrupted by a BankPrecharge/  
PrechargeAll command to the same bank. The following figure shows the optimum time that  
BankPrecharge/ PrechargeAll command is issued in different CAS latency.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Bank,  
Col A  
Bank  
Row  
Bank (s)  
ADDRESS  
tRP  
READ A  
NOP  
NOP  
NOP  
Precharge  
NOP  
NOP  
Activate  
NOP  
COMMAND  
CAS# Latency=2  
tCK2, DQ  
DOUT A0  
DOUT A1  
DOUT A0  
DOUT A2  
DOUT A1  
DOUT A3  
DOUT A2  
CAS# Latency=3  
tCK3, DQ  
DOUT A3  
Figure 9. Read to Precharge  
(CAS# Latency = 2, 3)  
5
Read and AutoPrecharge command  
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A8 = Column Address)  
The Read and AutoPrecharge command automatically performs the precharge operation after the  
read operation. Once this command is given, any subsequent command cannot occur within a time delay  
of {tRP (min.) + burst length}. At full-page burst, only the read operation is performed in this command and  
the auto precharge function is ignored.  
Confidential  
9
Rev. 2.0  
Mar. /2015