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AS4C512M8D3L 参数 Datasheet PDF下载

AS4C512M8D3L图片预览
型号: AS4C512M8D3L
PDF下载: 下载PDF文件 查看货源
内容描述: [AS4C512M8D3L - 78-ball FBGA PACKAGE]
分类和应用:
文件页数/大小: 86 页 / 3307 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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4Gb DDR3L AS4C512M8D3L  
-
DM  
Input  
Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle.  
DM has an optional use as TDQS on the x8.  
DQ0 DQ7 Input /  
Data I/O: The DQ0-DQ7 input and output data are synchronized with positive and negative  
Output  
edges of DQS and DQS#. The I/Os are byte-maskable during Writes.  
ODT  
Input  
On Die Termination: ODT (registered HIGH) enables termination resistance internal to  
the DDR3L SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#, DM/TDQS  
and TDQS# signal. (When TDQS is enabled via Mode Register A11=1 in MR1) The ODT  
pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.  
RESET#  
Input  
Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive  
when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a  
CMOS rail to rail signal with DC high and low at 80% and 20% of VDD  
VDD  
VSS  
Supply  
Supply  
Supply  
Supply  
Power Supply: +1.35V -0.067V/+0.1V  
Ground  
VDDQ  
VSSQ  
VREFCA  
VREFDQ  
ZQ  
DQ Power: +1.35V -0.067V/+0.1V  
DQ Ground  
Supply Reference voltage for CA  
Supply Reference voltage for DQ  
Supply Reference pin for ZQ calibration.  
NC  
-
No Connect: These pins should be left unconnected.  
Confidential  
7
Rev. 2.0  
Aug. /2014