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AS4C4M4F0-60JC 参数 Datasheet PDF下载

AS4C4M4F0-60JC图片预览
型号: AS4C4M4F0-60JC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 4M × 4 CMOS DRAM(快页模式) [5V 4M×4 CMOS DRAM (Fast Page mode)]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 18 页 / 271 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第1页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第2页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第3页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第4页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第6页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第7页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第8页浏览型号AS4C4M4F0-60JC的Datasheet PDF文件第9页  
AS4C4M4F0  
AS4C4M4F1  
®
AC parameters common to all waveforms  
-50  
-60  
Symbol  
tRC  
Parameter  
Min  
80  
30  
50  
8
Max  
Min  
100  
40  
60  
10  
15  
12  
10  
50  
5
Max  
Unit  
Notes  
Random read or write cycle time  
RAS precharge time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
ns  
ns  
ns  
ns  
tRP  
tRAS  
tCAS  
tRCD  
tRAD  
tRSH  
tCSH  
tCRP  
tASR  
tRAH  
tT  
RAS pulse width  
10K  
10K  
35  
25  
10K  
10K  
43  
30  
CAS pulse width  
RAS to CAS delay time  
RAS to column address delay time  
CAS to RAS hold time  
RAS to CAS hold time  
CAS to RAS precharge time  
Row address setup time  
Row address hold time  
Transition time (rise and fall)  
Refresh period  
15  
12  
10  
40  
5
6
7
0
0
8
10  
1
1
50  
64  
50  
64  
4,5  
3
tREF  
tCP  
CAS precharge time  
8
10  
30  
0
tRAL  
tASC  
tCAH  
Column address to RAS lead time  
Column address setup time  
Column address hold time  
25  
0
8
10  
Read cycle  
-50  
-60  
Symbol Parameter  
Min  
Max  
50  
12  
25  
Min  
Max  
60  
15  
30  
Unit  
ns  
Notes  
6
tRAC  
tCAC  
tAA  
Access time from RAS  
Access time from CAS  
ns  
6,13  
7,13  
Access time from address  
ns  
tRCS  
tRCH  
tRRH  
Read command setup time  
Read command hold time to CAS  
Read command hold time to RAS  
0
0
ns  
0
0
ns  
9
9
0
0
ns  
4/11/01; v.0.9  
Alliance Semiconductor  
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