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AS4C4M4F1Q-50JC 参数 Datasheet PDF下载

AS4C4M4F1Q-50JC图片预览
型号: AS4C4M4F1Q-50JC
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 14 页 / 310 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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1
2
3
I
I
, I , I , and I  
CC1 CC3 CC4  
are dependent on frequency.  
CC6  
and I depend on output loading. Specified values are obtained with the output open.  
CC1  
CC4  
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal  
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after  
extended periods of bias without clocks (greater than 8 ms).  
4
AC Characteristics assume t = 2 ns. All AC parameters are measured with a load equivalent to two TTL loads and 50 pF, V (min) GND and V (max)  
T
IL  
IH  
V  
.
CC  
5
6
V
(min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between V and V .  
I
H
I
L
I
H
I
L
Operation within the t  
RCD  
specified t  
(max) limit insures that t  
(max) can be met. t  
(max) is specified as a reference point only. If t  
(max) is specified as a reference point only. If t  
RAD  
is greater than the  
is greater than the  
RAC  
(max) limit, then access time is controlled exclusively by t  
RCD  
.
RCD  
RCD  
CAC  
(max) can be met. t  
7
Operation within the t  
(max) limit insures that t  
RAC  
RAD  
(max) limit, then access time is controlled exclusively by t  
RAD  
specified t  
.
AA  
RAD  
Assumes three state test load (5 pF and a 380 Thevenin equivalent).  
Either t or t must be satisfied for a read cycle.  
8
9
RCH  
RRH  
10  
t
(max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. t  
is referenced from  
OFF  
OFF  
rising edge of RAS or CAS, whichever occurs last.  
11  
t
, t , t , t and t are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only.  
WCS WCH RWD CWD  
AWD  
If tWS t (min) and tWH t (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the  
WS  
WH  
cycle. If tRWD t  
(min), t  
t  
(min) and tAWD t  
(min), the cycle is a read-write cycle and the data out will contain data read from the  
RWD  
CWD  
CWD  
AWD  
selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.  
12 These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.  
13 Access time is determined by the longest of t or t or t  
CAA CAC  
CPA  
14  
tASC t to achieve t (min) and t (max) values.  
CP PC CPA  
15 These parameters are sampled and not 100% tested.  
16 These characteristics apply to AS4C4M4F1Q 5V devices.  
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- Access times are measured with output reference levels of V  
=
OH  
2.4V and V = 0.4V,  
OL  
V
= 2.4V and V = 0.8V  
IL  
IH  
- Input rise and fall times: 2 ns  
+5V  
R1 = 828Ω  
D
out  
50 pF*  
R2 = 295Ω  
*including scope  
and jig capacitance  
GND  
Figure A: Equivalent output load  
AS4C4M4F1  
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Rising input  
Falling input  
Undefined output/don’t care  
3/22/02; v.1.3  
Alliance Semiconductor  
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